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SI7997DP-T1-GE3

Name: SI7997DP-T1-GE3
Rating: 4.7 (12 reviews)

MOSFET 2P-CH 30V 60A PPAK SO-8

제조업체
Mfr.부분 #SI7997DP-T1-GE3
패키지 PowerPAK-SO-8
데이터시트 SI7997DP-T1-GE3 DataSheet
재고 있음6802

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사양

Package	Tape & Reel (TR),Cut Tape (CT)
Series	TrenchFET®
ProductStatus	Active
FETType	2 P-Channel (Dual)
FETFeature	Standard
DraintoSourceVoltage(Vdss)	30V
Current-ContinuousDrain(Id)@25°C	60A
RdsOn(Max)@IdVgs	5.5mOhm @ 20A, 10V
Vgs(th)(Max)@Id	2.2V @ 250µA
GateCharge(Qg)(Max)@Vgs	160nC @ 10V
InputCapacitance(Ciss)(Max)@Vds	6200pF @ 15V
Power-Max	46W
OperatingTemperature	-55°C ~ 150°C (TJ)
MountingType	Surface Mount
Package/Case	PowerPAK® SO-8 Dual

개요

Description

The SI7997DP-T1-GE3 is a high-performance, dual N-channel MOSFET designed for efficient power management applications. This component features low on-resistance and fast switching capabilities, making it suitable for use in synchronous rectification, DC-DC converters, and power supply circuits. With a maximum drain-source voltage rating of 30V and a continuous drain current capability of up to 60A, it is ideal for applications requiring robust performance.
The device is housed in a compact SO-8 package, ensuring ease of integration into various electronic designs. Its thermal performance is enhanced through a low thermal resistance design, allowing it to handle significant power dissipation while maintaining reliability. The SI7997DP-T1-GE3 is commonly used in industries such as telecommunications, industrial automation, and consumer electronics, making it a versatile choice for engineers seeking efficient power solutions.

Features

The SI7997DP-T1-GE3 is a dual N-channel MOSFET designed for use in various power management applications. Key features include:
1. Low On-Resistance (RDS(on)): This minimizes power loss and enhances efficiency, typically around 6.5 mΩ at VGS = 10V.
2. High Voltage Rating: It can handle up to 30V, making it suitable for a range of applications.
3. Fast Switching Speeds: Optimized for high-frequency operation, enabling improved performance in switching applications.
4. Compact Package: Available in a small SOIC-8 package, ensuring a space-efficient design for PCB layouts.
5. Thermal Performance: With a low thermal resistance, it effectively dissipates heat, ensuring reliable operation.
6. Robust Gate Drive: Compatible with standard logic level gate drive voltages, allowing easy integration into circuits.
These features make the SI7997DP-T1-GE3 ideal for applications like DC-DC converters, load switches, and power distribution in consumer electronics and industrial systems.

Package

The SI7997DP-T1-GE3 is packaged in a DPAK (TO-252) format.

Pinout

The SI7997DP-T1-GE3 is a dual N-channel MOSFET from Vishay Siliconix, designed for high-efficiency switching applications. It features a total of 6 pins.
The pin configuration and functions are as follows:
1. Gate1 (G1) - Controls the first N-channel MOSFET.
2. Source1 (S1) - Source terminal of the first N-channel MOSFET.
3. Drain1 (D1) - Drain terminal of the first N-channel MOSFET.
4. Gate2 (G2) - Controls the second N-channel MOSFET.
5. Source2 (S2) - Source terminal of the second N-channel MOSFET.
6. Drain2 (D2) - Drain terminal of the second N-channel MOSFET.
This component is commonly used in power management and DC-DC converter applications due to its low on-resistance and high-speed switching capabilities.

Manufacturer

The SI7997DP-T1-GE3 is manufactured by Vishay Intertechnology, Inc. Vishay is a global manufacturer of discrete semiconductors and passive components, known for their wide range of electronic components used in various applications, including industrial, automotive, consumer electronics, and telecommunications. The company specializes in products such as diodes, resistors, capacitors, and integrated circuits, catering to both high-tech and everyday electronic needs. With a strong focus on innovation, Vishay plays a significant role in the electronics industry, providing solutions that enhance the performance and efficiency of electronic devices.

Application

The SI7997DP-T1-GE3 is a high-speed, low RDS(ON) N-channel MOSFET, primarily used in applications such as DC-DC converters, load switching, power management systems, and battery management. Its features make it suitable for automotive, industrial, and consumer electronics where efficient power delivery and thermal performance are critical.

Equivalent

The SI7997DP-T1-GE3 is a high-speed, low-side N-channel MOSFET driver. Equivalent products include the MIC4427, TC4420, and MAX4423, which also offer similar driving capabilities for MOSFETs. Ensure compatibility with your specific application requirements, such as voltage ratings and switching speeds. Always consult the datasheets for exact specifications before substituting any components.