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SI9435BDY-T1-E3
MOSFET P-CH 30V 4.1A 8SO
- 제조업체
- Mfr.부분 #SI9435BDY-T1-E3
- 패키지 SOIC-8
- 데이터시트
- 재고 있음6074
100% 원래 &새로운
배송 준비 24 시간
365 일 보장
RFQ 및더 많은 할인
사양
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | TrenchFET® |
| ProductStatus | Active |
| FETType | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 30 V |
| Current-ContinuousDrain(Id)@25°C | 4.1A (Ta) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 4.5V, 10V |
| RdsOn(Max)@IdVgs | 42mOhm @ 5.7A, 10V |
| Vgs(th)(Max)@Id | 3V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 24 nC @ 10 V |
| Vgs(Max) | ±20V |
| PowerDissipation(Max) | 1.3W (Ta) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | 8-SOIC |
개요
Description
This MOSFET comes in a TO-220 package, providing easy heat dissipation and robust mounting options. Its fast switching speed allows for efficient operation in high-frequency applications. The SI9435BDY-T1-E3 is commonly used in buck converters, power supplies, and motor control circuits. It also has a built-in gate protection feature to enhance reliability during operation. Overall, this MOSFET is well-suited for applications requiring efficient power management and high performance.
Features
1. Voltage Rating: It has a drain-source voltage (V_DS) of 30V.
2. Current Rating: The maximum continuous drain current (I_D) can reach up to 60A.
3. Low R_DS(on): It offers a low on-resistance (R_DS(on)) of approximately 8.5 mΩ at a gate-source voltage (V_GS) of 10V, improving efficiency and thermal performance.
4. Thermal Characteristics: The device has a high maximum junction temperature, allowing for better thermal management in applications.
5. Package Type: Encased in a TO-220 package, it provides good thermal dissipation.
6. Fast Switching Speed: Suitable for high-frequency applications due to its fast switching characteristics.
7. Applications: Ideal for DC-DC converters, power management, and motor control.
Overall, the SI9435BDY-T1-E3 is designed for efficiency and reliability in various power applications.
Package
Pinout
The pin functions are as follows:
1. Pin 1 (D1): Drain of the first N-channel MOSFET.
2. Pin 2 (G1): Gate of the first N-channel MOSFET.
3. Pin 3 (S1): Source of the first N-channel MOSFET.
4. Pin 4 (S2): Source of the second N-channel MOSFET.
5. Pin 5 (G2): Gate of the second N-channel MOSFET.
6. Pin 6 (D2): Drain of the second N-channel MOSFET.
7. Pin 7 (NC): No connection (not used).
8. Pin 8 (GND): Ground.
The Si9435BDY-T1-E3 has low on-resistance, making it suitable for applications requiring efficient power switching.
Manufacturer
Application
Equivalent
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