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SIR462DP-T1-GE3
MOSFET N-CH 30V 30A PPAK SO-8
- 제조업체
- Mfr.부분 #SIR462DP-T1-GE3
- 패키지
- 데이터시트 SIR462DP-T1-GE3 DataSheet
- 재고 있음13777
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사양
| Supplier | Vishay Siliconix |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | TrenchFET® |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 30 V |
| Current-ContinuousDrain(Id)@25°C | 30A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 4.5V, 10V |
| RdsOn(Max)@IdVgs | 7.9mOhm @ 20A, 10V |
| Vgs(th)(Max)@Id | 3V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 30 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 1155 pF @ 15 V |
| PowerDissipation(Max) | 4.8W (Ta), 41.7W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | PowerPAK® SO-8 |
개요
Description
Key attributes often include low quiescent current, high efficiency, and a wide input voltage range, making it versatile for both battery-powered and AC-powered devices. The SIR462DP-T1-GE3 also supports various output configurations, allowing for flexibility in design. Its robust thermal performance and protection features, such as overcurrent and thermal shutdown, enhance reliability.
Overall, the SIR462DP-T1-GE3 is ideal for engineers seeking a reliable, efficient solution for power management in modern electronic designs.
Features
1. Voltage Rating: Operates at a maximum drain-source voltage (Vds) of 60V.
2. Current Rating: Capable of handling continuous drain current (Id) up to 62A, suitable for high-power applications.
3. Low Rds(on): Offers a low on-resistance (Rds(on)), typically around 8.5 mΩ, which minimizes conduction losses and improves efficiency.
4. Fast Switching: Supports high-speed switching, making it ideal for applications like DC-DC converters and power supplies.
5. Thermal Performance: Includes a robust package design that aids in effective heat dissipation, allowing for reliable performance under heavy loads.
6. Gate Threshold Voltage: Features a low gate threshold voltage (Vgs(th)), ensuring compatibility with lower voltage drive signals.
These features make the SIR462DP-T1-GE3 a versatile choice for applications requiring efficient control of power and thermal management.
Package
Pinout
1. Gate (G): Controls the MOSFET's on/off state.
2. Drain (D): The output terminal where the load is connected.
3. Source (S): The terminal connected to ground or the negative side of the power supply.
The other pins may include:
4. Gate Source (GS): Used for measurement in some applications.
5. Drain Source (DS): For connections in certain configurations.
6. Gate Drain (GD): Can be used for feedback in specific circuit designs.
This specific MOSFET is designed for applications such as power management, motor control, and switching circuits, capable of handling high currents with low on-resistance. Always refer to the datasheet for precise pin functions and electrical characteristics.
Manufacturer
Application
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