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SIS407DN-T1-GE3
MOSFET P-CH 20V 25A PPAK1212-8
- 제조업체
- Mfr.부분 #SIS407DN-T1-GE3
- 패키지 PowerPAK®1212-8
- 데이터시트 SIS407DN-T1-GE3 DataSheet
- 재고 있음5486
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사양
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | TrenchFET® |
| ProductStatus | Active |
| FETType | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 20 V |
| Current-ContinuousDrain(Id)@25°C | 25A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 1.8V, 4.5V |
| RdsOn(Max)@IdVgs | 9.5mOhm @ 15.3A, 4.5V |
| Vgs(th)(Max)@Id | 1V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 93.8 nC @ 8 V |
| Vgs(Max) | ±8V |
| InputCapacitance(Ciss)(Max)@Vds | 2760 pF @ 10 V |
| PowerDissipation(Max) | 3.6W (Ta), 33W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | PowerPAK® 1212-8 |
개요
Description
Its compact size and surface mount package contribute to space-saving designs, while its fast switching capabilities enhance performance in rapid switching applications. The SIS407DN-T1-GE3 also boasts a robust gate threshold voltage, ensuring reliable operation in diverse environmental conditions. This MOSFET is commonly used in applications that require high reliability and efficiency, such as automotive electronics, renewable energy systems, and telecommunications.
Overall, the SIS407DN-T1-GE3 is an excellent choice for engineers seeking a reliable and efficient solution for modern electronic circuit design.
Features
1. Dual Channel: Provides two channels for simultaneous processing, enhancing versatility.
2. High-Speed Performance: Offers a slew rate of up to 30 V/μs, making it suitable for fast signal processing.
3. Low Noise: Features low input voltage noise, which is critical for high-fidelity applications.
4. Wide Supply Voltage Range: Operates from a single supply of 3V to 20V or dual supplies, providing flexibility in various applications.
5. Rail-to-Rail Output: Allows output voltage to swing close to the power supply rails, maximizing output range.
6. Low Power Consumption: Designed for efficiency, suitable for battery-powered devices.
7. Temperature Range: Operates over an extended temperature range, ensuring reliability in diverse environments.
These features make the SIS407DN-T1-GE3 suitable for a variety of applications, including audio processing, data acquisition, and instrumentation.
Package
Pinout
The pin configuration and functions are as follows:
1. Gate 1 (G1) - Controls the first N-channel MOSFET.
2. Drain 1 (D1) - Connects to the load for the first N-channel MOSFET.
3. Source 1 (S1) - Source terminal for the first N-channel MOSFET.
4. Gate 2 (G2) - Controls the second N-channel MOSFET.
5. Drain 2 (D2) - Connects to the load for the second N-channel MOSFET.
6. Source 2 (S2) - Source terminal for the second N-channel MOSFET.
7. Common Source (CS) - Often used for connecting the source terminals of both MOSFETs to ground.
This device is commonly used in power management applications, including switching regulators and motor control.
Manufacturer
Application
Equivalent
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