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SISS61DN-T1-GE3
MOSFET P-CH 20V 30.9/111.9A PPAK
- 제조업체
- Mfr.부분 #SISS61DN-T1-GE3
- 패키지 PowerPAK-1212-8
- 데이터시트 SISS61DN-T1-GE3 DataSheet
- 재고 있음2443
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배송 준비 24 시간
365 일 보장
RFQ 및더 많은 할인
사양
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | TrenchFET® Gen III |
| ProductStatus | Active |
| FETType | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 20 V |
| Current-ContinuousDrain(Id)@25°C | 30.9A (Ta), 111.9A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 1.8V, 4.5V |
| RdsOn(Max)@IdVgs | 3.5mOhm @ 15A, 4.5V |
| Vgs(th)(Max)@Id | 900mV @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 231 nC @ 10 V |
| Vgs(Max) | ±8V |
| InputCapacitance(Ciss)(Max)@Vds | 8740 pF @ 10 V |
| PowerDissipation(Max) | 5W (Ta), 65.8W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | PowerPAK® 1212-8S |
개요
Description
Key specifications typically include a breakdown voltage, photon detection efficiency, and a gain factor, which defines its responsiveness to incoming light. The SiPM operates in a Geiger mode, allowing it to detect single photons, which is crucial for applications requiring precision and accuracy.
This device is part of a growing trend towards solid-state light detection technology, offering advantages over traditional photomultiplier tubes, such as robustness, immunity to magnetic fields, and ease of integration into electronic systems. Overall, the SISS61DN-T1-GE3 represents a versatile and advanced option for researchers and engineers working with light-based technologies.
Features
1. Low Forward Voltage: It offers a low forward voltage drop, which enhances efficiency in power applications.
2. High Current Rating: Capable of handling significant forward current, making it suitable for high-power applications.
3. Fast Recovery: The diode exhibits rapid recovery characteristics, minimizing switching losses.
4. Thermal Stability: Designed to operate effectively over a wide temperature range, providing reliability in various conditions.
5. Compact Package: Housed in a compact form factor, allowing for space-efficient designs in electronic circuits.
6. High Reverse Voltage: Can withstand substantial reverse voltages, enhancing its applicability in diverse circuits.
This diode is ideal for applications in power supplies, DC-DC converters, and other electronic devices requiring efficient rectification and fast switching.
Package
Pinout
The pin configuration typically includes:
1. Gate1 - Controls the first MOSFET's switching.
2. Drain1 - Drain terminal for the first MOSFET.
3. Source1 - Source terminal for the first MOSFET.
4. Gate2 - Controls the second MOSFET's switching.
5. Drain2 - Drain terminal for the second MOSFET.
6. Source2 - Source terminal for the second MOSFET.
The device features low on-resistance and fast switching speeds, making it suitable for applications that require efficient power handling.
Manufacturer
Application
Equivalent
배송
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지불
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