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SPD04N80C3
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- Mfr.부분 #SPD04N80C3
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사양
| Technology | Si |
| Packaging | Reel |
| Brand | Infineon Technologies |
| Product Type | MOSFETs |
| Series | CoolMOS C3 |
| Factory Pack Quantity:Factory Pack Quantity | 2500 |
| Subcategory | Transistors |
| Part # Aliases | SP000315410 SPD04N80C3BTMA1 |
| Shipping Restrictions | Mouser does not presently sell this product in your region. |
| Mounting Style | SMD/SMT |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| Height | 2.3 mm |
| Length | 6.5 mm |
| Width | 6.22 mm |
| Unit Weight | 0.011640 oz |
| Package / Case | DPAK-3 (TO-252-3) |
| Configuration | Single |
| Tradename | CoolMOS |
| Transistor Polarity | N-Channel |
| Number of Channels | 1 Channel |
| Vds - Drain-Source Breakdown Voltage | 800 V |
| Id - Continuous Drain Current | 4 A |
| Rds On - Drain-Source Resistance | 1.1 Ohms |
| Vgs - Gate-Source Voltage | - 20 V, + 20 V |
| Vgs th - Gate-Source Threshold Voltage | 2.1 V |
| Qg - Gate Charge | 31 nC |
| Pd - Power Dissipation | 63 W |
| Channel Mode | Enhancement |
| Fall Time | 12 ns |
| Rise Time | 15 ns |
| Transistor Type | 1 N-Channel |
| Typical Turn-Off Delay Time | 72 ns |
| Typical Turn-On Delay Time | 25 ns |
개요
Description
The SPD04N80C3 is an N-channel power MOSFET designed for high-voltage applications. It features a maximum drain-source voltage (VDS) of 800V and a continuous drain current (ID) rating of 4A, making it suitable for switching and amplification in power electronics. The device typically showcases a low on-resistance (RDS(on)), which minimizes power loss and improves efficiency in circuits.
Key applications include power supplies, motor control, and other high-voltage switching applications. The SPD04N80C3 comes in a TO-220 package, providing good thermal performance and ease of mounting to heat sinks. Its high breakdown voltage and superior switching characteristics make it a popular choice for engineers requiring reliability in demanding conditions.
Overall, the SPD04N80C3 is an essential component for those working in power electronics, offering robust performance for various high-voltage applications.
Key applications include power supplies, motor control, and other high-voltage switching applications. The SPD04N80C3 comes in a TO-220 package, providing good thermal performance and ease of mounting to heat sinks. Its high breakdown voltage and superior switching characteristics make it a popular choice for engineers requiring reliability in demanding conditions.
Overall, the SPD04N80C3 is an essential component for those working in power electronics, offering robust performance for various high-voltage applications.
Features
The SPD04N80C3 is a high-voltage N-channel MOSFET designed for various applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (VDS) of 800V, making it suitable for high-voltage applications.
2. Current Rating: The device can handle a continuous drain current (ID) of up to 4A, depending on thermal conditions.
3. Power Dissipation: It has a maximum power dissipation of 94W, allowing it to manage heat effectively in various operating environments.
4. Gate-Source Voltage: The maximum gate-source voltage (VGS) is ±20V, which provides design flexibility.
5. RDS(on): Low on-resistance (RDS(on)) ensures efficient switching and minimizes conduction losses.
6. Package Type: It is typically available in a TO-220 package, which offers good thermal performance and ease of mounting.
7. Fast Switching: The MOSFET provides fast switching speeds, making it ideal for applications in switching power supplies and motor control.
Overall, the SPD04N80C3 is suitable for use in high-efficiency power circuits and industrial applications.
1. Voltage Rating: It has a maximum drain-source voltage (VDS) of 800V, making it suitable for high-voltage applications.
2. Current Rating: The device can handle a continuous drain current (ID) of up to 4A, depending on thermal conditions.
3. Power Dissipation: It has a maximum power dissipation of 94W, allowing it to manage heat effectively in various operating environments.
4. Gate-Source Voltage: The maximum gate-source voltage (VGS) is ±20V, which provides design flexibility.
5. RDS(on): Low on-resistance (RDS(on)) ensures efficient switching and minimizes conduction losses.
6. Package Type: It is typically available in a TO-220 package, which offers good thermal performance and ease of mounting.
7. Fast Switching: The MOSFET provides fast switching speeds, making it ideal for applications in switching power supplies and motor control.
Overall, the SPD04N80C3 is suitable for use in high-efficiency power circuits and industrial applications.
Package
The SPD04N80C3 is typically packaged in a TO-220 format. This package type allows for efficient heat dissipation and is commonly used for power MOSFETs in various applications.
Pinout
The SPD04N80C3 is an N-channel MOSFET with a pin count of 4. Its pin configuration is as follows:
1. Gate (G): Controls the switching of the MOSFET.
2. Drain (D): The output terminal where the load is connected.
3. Source (S): The terminal connected to ground or the negative side of the circuit.
4. Tab (T): The heat sink tab, typically connected to the source for thermal management.
This MOSFET is designed for high-voltage applications, capable of handling up to 800V with a continuous drain current of 4A. It features low on-resistance and fast switching capabilities, making it suitable for power management and switching applications.
1. Gate (G): Controls the switching of the MOSFET.
2. Drain (D): The output terminal where the load is connected.
3. Source (S): The terminal connected to ground or the negative side of the circuit.
4. Tab (T): The heat sink tab, typically connected to the source for thermal management.
This MOSFET is designed for high-voltage applications, capable of handling up to 800V with a continuous drain current of 4A. It features low on-resistance and fast switching capabilities, making it suitable for power management and switching applications.
Manufacturer
The SPD04N80C3 is manufactured by STMicroelectronics, a global semiconductor company. STMicroelectronics specializes in the design, development, manufacturing, and marketing of a wide range of semiconductor products, including integrated circuits and discrete devices. The company serves various sectors such as automotive, industrial, consumer electronics, and telecommunications, providing solutions that enhance efficiency and performance in electronic systems. With a focus on innovation and sustainability, STMicroelectronics is known for its commitment to advancing technology and supporting the growing demand for smart, connected devices.
Application
The SPD04N80C3 is a high-voltage N-channel MOSFET commonly used in power electronics applications, including switch-mode power supplies, motor control, and lighting systems. Its features make it suitable for high-frequency switching, enabling efficient energy conversion. Additionally, it is applied in automotive electronics, industrial power management, and renewable energy systems such as inverters for solar power.
Equivalent
The SPD04N80C3 is a 800V, 4A N-channel MOSFET. Equivalent products include the STP4N80Z, IRF840, and MTD4N80. Always check the specific datasheets for parameters like R_DS(on), V_GS(th), and package type to ensure compatibility in your application.
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