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SQJ459EP-T1_GE3
MOSFET P-CH 60V 52A PPAK SO-8
- 제조업체
- Mfr.부분 #SQJ459EP-T1_GE3
- 패키지
- 데이터시트 SQJ459EP-T1_GE3 DataSheet
- 재고 있음17468
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사양
| Supplier | Vishay Siliconix |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | Automotive, AEC-Q101, TrenchFET® |
| ProductStatus | Active |
| FETType | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 60 V |
| Current-ContinuousDrain(Id)@25°C | 52A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 4.5V, 10V |
| RdsOn(Max)@IdVgs | 18mOhm @ 3.5A, 10V |
| Vgs(th)(Max)@Id | 2.5V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 108 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 4586 pF @ 30 V |
| PowerDissipation(Max) | 83W (Tc) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | PowerPAK® SO-8 |
개요
Description
Key specifications include a maximum drain-source voltage (V_DS) rating, a low gate threshold voltage (V_GS(th)), and a robust current handling capacity, allowing it to perform well under various load conditions. The device is packaged in a compact, surface-mount format that facilitates easy integration into circuit designs.
Its thermal performance, characterized by a low thermal resistance, enables better heat dissipation, enhancing reliability in high-performance applications. Additionally, the SQJ459EP-T1_GE3 is RoHS compliant, ensuring it meets environmental standards for hazardous materials. Overall, this MOSFET offers an effective solution for engineers seeking reliable and efficient components for power applications.
Features
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 30V, making it suitable for low-voltage applications.
2. Current Rating: It can handle continuous drain currents up to 50A, allowing for robust performance in demanding environments.
3. Low R_DS(on): The on-resistance is low, typically around 10 mΩ, which minimizes conduction losses and enhances efficiency.
4. Fast Switching: The device supports high-speed switching capabilities, making it ideal for applications like DC-DC converters and power supplies.
5. Thermal Performance: It offers good thermal characteristics, with a maximum junction temperature of 175°C, allowing for reliable operation under various conditions.
6. Package Type: The MOSFET is typically housed in a TO-220 package, facilitating easy heat dissipation and mounting.
Overall, the SQJ459EP-T1_GE3 is well-suited for power management, automotive, and industrial applications where efficiency and reliability are critical.
Package
Pinout
1. Gate (G) - Controls the MOSFET's switching.
2. Drain (D) - The main output terminal where the load is connected.
3. Source (S) - The terminal that connects to ground or the negative side of the circuit.
The specific pin configuration is as follows:
1. Pin 1: Gate
2. Pin 2: Drain
3. Pin 3: Source
4. Pin 4: Source
5. Pin 5: Drain
6. Pin 6: Gate
7. Pin 7: Source
8. Pin 8: Drain
It's important to refer to the manufacturer's datasheet for detailed specifications, including electrical characteristics and thermal performance.
Manufacturer
Application
Equivalent
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배송 요금 참조 (DHL/FedEx):
DHL은: 배송 비용은 $25-$45 (0.5kg)에서 2-5 영업일의 추정적 배달 시간이 있습니다.
FedEx는: 배송 비용은 $25-$40 (0.5kg)에서 3-7 영업일의 추정적 배달 시간을 가지고 있습니다.
UPS는: 배송 비용은 $25-$45 (0.5kg)에서 3-7 영업일의 추정적 배달 시간을 가지고 있습니다.
TNT는: 배송 비용은 $25-$65 (0.5kg)에서 3-7 영업일의 추정적 배달 시간을 가지고 있습니다.
EMS는: 배송 비용은 $30-$50 (0.5kg)에서 7-15 영업일의 추정적 배달 시간을 제공합니다.
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