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SQM120P06-07L_GE3
MOSFET P-CH 60V 120A TO263
- 제조업체
- Mfr.부분 #SQM120P06-07L_GE3
- 패키지
- 데이터시트 SQM120P06-07L_GE3 DataSheet
- 재고 있음12595
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사양
| Supplier | Vishay Siliconix |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | TrenchFET® |
| ProductStatus | Active |
| FETType | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 60 V |
| Current-ContinuousDrain(Id)@25°C | 120A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 4.5V, 10V |
| RdsOn(Max)@IdVgs | 6.7mOhm @ 30A, 10V |
| Vgs(th)(Max)@Id | 2.5V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 270 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 14280 pF @ 25 V |
| PowerDissipation(Max) | 375W (Tc) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | TO-263 (D²Pak) |
개요
Description
Key specifications typically include a low on-resistance, high voltage rating, and robust thermal performance, allowing it to handle significant power loads while minimizing heat generation. The "GE3" designation often indicates that the component is manufactured using a specific process or material, enhancing its reliability and performance characteristics.
Engineers and designers commonly select the SQM120P06-07L_GE3 for applications that require efficient energy conversion and management, contributing to smaller, more efficient electronic designs. For detailed specifications and application guidelines, referring to the manufacturer's datasheet is recommended.
Features
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 60V, making it suitable for medium-voltage applications.
2. Continuous Drain Current: The device supports a continuous drain current (I_D) of up to 120A, facilitating high current handling.
3. R_DS(on): It offers low on-resistance (R_DS(on)), typically around 7 mΩ, ensuring efficient power conversion and reduced heat generation.
4. Fast Switching: The MOSFET is optimized for fast switching speeds, making it ideal for applications like DC-DC converters and motor drives.
5. Thermal Performance: Equipped with a TO-220 package, it provides good thermal dissipation capabilities.
6. Gate Threshold Voltage: A low gate threshold voltage enhances compatibility with low-voltage drive circuits.
These features make the SQM120P06-07L_GE3 suitable for applications such as power supplies, automotive systems, and industrial equipment.
Package
Pinout
1. Gate (G): Controls the MOSFET's switching function; applying a voltage to this pin turns the device on.
2. Drain (D): Connects to the load; current flows from this pin when the MOSFET is on.
3. Source (S): Connects to the ground or negative side of the supply; current exits this pin when the device is on.
4. Tab (T): Often used for heat dissipation; electrically connected to the source.
5. Gate (G) (again, in some packages): May have a second gate pin or be used for thermal management.
This MOSFET is designed for applications requiring efficient switching, such as in power management and motor control. Always refer to the specific datasheet for detailed electrical characteristics and usage guidelines.
Manufacturer
Application
Equivalent
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