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STB120NF10T4
MOSFET N-CH 100V 110A D2PAK
- 제조업체
- Mfr.부분 #STB120NF10T4
- 패키지 TO-263-3
- 데이터시트 STB120NF10T4 DataSheet
- 재고 있음3976
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사양
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | STripFET™ II |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 100 V |
| Current-ContinuousDrain(Id)@25°C | 110A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 10.5mOhm @ 60A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 233 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 5200 pF @ 25 V |
| PowerDissipation(Max) | 312W (Tc) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | D2PAK |
개요
Description
Key specifications include a maximum gate-source voltage (V_GS) of ±20V and a total gate charge (Q_G) that ensures fast switching speeds. The STB120NF10T4 is housed in a TO-220 package, providing effective heat dissipation. Its robust electrical characteristics make it ideal for demanding applications in automotive, industrial, and consumer electronics.
Overall, the STB120NF10T4 is a versatile component for designers seeking high-performance, reliable switching solutions in their electronic circuits.
Features
1. Voltage Rating: Capable of withstanding a maximum drain-source voltage of 100V.
2. Current Rating: Supports continuous drain current up to 120A at a specified temperature.
3. RDS(on): Low on-resistance (around 10mΩ) for improved efficiency and reduced power loss during operation.
4. Gate Threshold Voltage: Typically low gate threshold voltage, allowing for easier driving in various applications.
5. Package Type: Available in a TO-220 package, which provides effective thermal management.
6. High-Speed Switching: Suitable for high-frequency applications, enhancing overall system performance.
7. Thermal Resistance: Good thermal performance due to its design, enabling higher power dissipation.
8. Applications: Commonly used in power supplies, motor drives, and other switching applications.
This MOSFET is ideal for applications requiring high efficiency and reliability in demanding environments.
Package
Pinout
1. Gate (G): This is the control pin used to turn the MOSFET on or off by applying a voltage.
2. Drain (D): This is the pin through which the current flows out when the device is in the 'on' state.
3. Source (S): This pin is connected to the ground or the negative side of the power supply in typical applications.
The STB120NF10T4 is designed for high efficiency and low on-resistance, making it suitable for applications such as power management, DC-DC converters, and motor control in various electronic devices.
Manufacturer
Application
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