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STB12NM50T4
MOSFET N-CH 550V 12A D2PAK
- 제조업체
- Mfr.부분 #STB12NM50T4
- 패키지
- 데이터시트 STB12NM50T4 DataSheet
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사양
| Series | MDmesh™ |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 550 V |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 350mOhm @ 6A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 50µA |
| Gate Charge (Qg) (Max) @ Vgs | 39 nC @ 10 V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 1000 pF @ 25 V |
| Power Dissipation (Max) | 160W (Tc) |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | D2PAK |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Base Product Number | STB12N |
개요
Description
This MOSFET is often used in applications such as switch-mode power supplies, motor drivers, and other high-voltage circuits. Its high-speed switching capability, combined with thermal stability, contributes to enhanced reliability in demanding environments. The package type, typically a TO-220 or similar, facilitates effective heat dissipation, crucial for maintaining performance under load.
Overall, the STB12NM50T4 is a robust choice for engineers seeking efficiency and reliability in power electronic designs.
Features
1. Voltage Rating: It can handle a maximum drain-source voltage (Vds) of 500V, making it suitable for high-voltage applications.
2. Continuous Drain Current: It supports a continuous drain current (Id) of 12A at a case temperature of 25°C.
3. RDS(on): The on-resistance is low, typically around 0.12Ω, which enhances efficiency and reduces power losses during operation.
4. Gate Threshold Voltage: The gate threshold voltage (Vgs(th)) ranges from 2V to 4V, allowing for easier drive circuitry.
5. Packaging: It comes in a TO-220 package, facilitating good thermal dissipation and ease of mounting.
6. Fast Switching: The device supports fast switching speeds, suitable for applications like power management and converters.
7. High Reliability: Built with robust semiconductor technology, it offers excellent thermal stability and reliability.
These features make the STB12NM50T4 ideal for use in power supplies, motor drivers, and other high-efficiency applications.
Package
Pinout
1. Gate (G) - This pin is used to control the MOSFET; applying voltage here allows current to flow from the drain to the source.
2. Drain (D) - This is the terminal where current flows out of the MOSFET when it is turned on.
3. Source (S) - This is the terminal where current enters the MOSFET.
The STB12NM50T4 is designed for high voltage applications, with a maximum drain-source voltage (V_DS) of 500V and a continuous drain current (I_D) of 12A. It is typically used in power switching applications, such as in power supplies, motor drivers, and other high-voltage circuits.
Manufacturer
Application
Equivalent
1. IRF840
2. FQPF16N50
3. MTD12N50
4. BTA12-400V
Ensure to check the datasheets for specific characteristics like Vds, Id, Rds(on), and package type to ensure compatibility with your application.
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