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STB45N60DM2AG
MOSFET N-CH 600V 34A D2PAK
- 제조업체
- Mfr.부분 #STB45N60DM2AG
- 패키지
- 데이터시트
- 재고 있음7258
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사양
| Series | MDmesh™ DM2 |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600 V |
| Current - Continuous Drain (Id) @ 25°C | 34A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 90mOhm @ 17A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 56 nC @ 10 V |
| Vgs (Max) | ±25V |
| Input Capacitance (Ciss) (Max) @ Vds | 2500 pF @ 100 V |
| Power Dissipation (Max) | 250W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-263 (D2PAK) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Base Product Number | STB45 |
개요
Description
It is ideal for use in various applications, including switch-mode power supplies, motor drivers, and lighting control systems. The STB45N60DM2AG is housed in a TO-220 package, facilitating heat dissipation and ease of mounting on heatsinks. With built-in protection features, such as avalanche capability, it ensures reliability under transient conditions. Overall, this MOSFET offers an effective solution for designers seeking robust performance in high-voltage power conversion systems.
Features
1. Voltage Rating: It has a maximum drain-source voltage (VDS) of 600V, suitable for high-voltage applications.
2. Current Rating: The MOSFET can handle a continuous drain current (ID) of 45A at a case temperature of 25°C.
3. Low On-Resistance: It features a low RDS(on) of around 0.19Ω, which minimizes power loss during operation.
4. Fast Switching: Offers high-speed switching capabilities, making it ideal for applications in power supplies and inverters.
5. Thermal Performance: Designed with a TO-220 package, it provides excellent thermal dissipation, allowing for effective heat management.
6. Safe Operating Area: It includes a specified safe operating area (SOA) to ensure reliability under various conditions.
7. Gate Threshold Voltage: The gate threshold voltage (VGS(th)) ranges from 2 to 4V, enabling easy drive with logic-level signals.
These features make the STB45N60DM2AG suitable for applications in switch mode power supplies, motor controls, and energy conversion systems.
Package
Pinout
1. Gate (G) - Controls the MOSFET's switching.
2. Drain (D) - The terminal where the current exits the MOSFET.
3. Source (S) - The terminal where the current enters the MOSFET.
The STB45N60DM2AG is designed for high-voltage applications, rated for a maximum drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) of 45A. It features low on-resistance (R_DS(on)) to enhance efficiency in power switching applications, making it suitable for power supplies, motor control, and other high-efficiency switching applications.
Manufacturer
Application
Equivalent
1. IRF3205
2. FQP45N60
3. MTP45N60
4. APT45M60J
5. SI4460
Always check the datasheets for specific parameters to ensure compatibility in your application.
배송
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배송 요금 참조 (DHL/FedEx):
DHL은: 배송 비용은 $25-$45 (0.5kg)에서 2-5 영업일의 추정적 배달 시간이 있습니다.
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UPS는: 배송 비용은 $25-$45 (0.5kg)에서 3-7 영업일의 추정적 배달 시간을 가지고 있습니다.
TNT는: 배송 비용은 $25-$65 (0.5kg)에서 3-7 영업일의 추정적 배달 시간을 가지고 있습니다.
EMS는: 배송 비용은 $30-$50 (0.5kg)에서 7-15 영업일의 추정적 배달 시간을 제공합니다.
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