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STB45N65M5

Name: STB45N65M5
Rating: 4.7 (12 reviews)

MOSFET N CH 650V 35A D2PAK

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Mfr.부분 #STB45N65M5
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데이터시트 STB45N65M5 DataSheet
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사양

Supplier	STMicroelectronics
Package	Tape & Reel (TR),Cut Tape (CT)
Series	MDmesh™ V
ProductStatus	Active
FETType	N-Channel
Technology	MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)	650 V
Current-ContinuousDrain(Id)@25°C	35A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn)	10V
RdsOn(Max)@IdVgs	78mOhm @ 19.5A, 10V
Vgs(th)(Max)@Id	5V @ 250µA
GateCharge(Qg)(Max)@Vgs	91 nC @ 10 V
Vgs(Max)	±25V
InputCapacitance(Ciss)(Max)@Vds	3375 pF @ 100 V
PowerDissipation(Max)	210W (Tc)
OperatingTemperature	150°C (TJ)
MountingType	Surface Mount
SupplierDevicePackage	D²PAK (TO-263)

개요

Description

STB45N65M5 is a high-voltage N-channel power MOSFET from STMicroelectronics (STB family). It’s designed for switching applications in power electronics (offline SMPS, PFC, motor drives, inverters).
Key points:
- Voltage/current: VDS around 650 V; continuous ID about ~45 A (depends on package and cooling).
- Technology: Trenched N-channel MOSFET with relatively low RDS(on) for a 650 V device; good switching performance.
- Drive and protection: Gate threshold typically 2–4 V; intended for gate drive around 10–12 V; avalanche ruggedness and robust SOA characteristics.
- Packages: Available in surface-mount options such as D²PAK (TO-263) and DPAK variants.
- Applications: Power supplies, motor drives, inverters, and other high-voltage switching circuits.
Note: For exact electrical parameters (RDS(on), Qg, SOA, thermal specs) and packaging, consult the latest ST datasheet.

Features

STB45N65M5 is an STMicroelectronics 650 V N-channel power MOSFET. Key features:
- 650 V blocking voltage
- 45 A continuous drain current
- MDmesh™ M5 trench technology for low conduction losses and fast switching
- Avalanche-rated ruggedness for hard-switched offline and motor-drive use
- Suitable for high-speed, high-reliability power conversion (SMPS, PFC, inverters, motor drives)
- Multiple packaging options (TO-220AB, D²PAK, D‑PAK, etc.) with Pb-free/RoHS compliance
Note: exact Rds(on), gate drive requirements, and other electrical specifics vary by package and lot; consult the datasheet for precise values.

Package

The STB45N65M5 is a power MOSFET supplied in a TO-247 three-lead (through-hole) package.

Pinout

Pin count: 3 (Gate, Drain, Source) with the Drain tied to the tab.
Function: N-channel enhancement‑mode power MOSFET (high-voltage switch, 650 V), used in power‑electronics applications.

Manufacturer

Manufacturer: STMicroelectronics (ST).
What kind of company: STMicroelectronics is a multinational integrated semiconductor company (IDM) that designs, manufactures and sells a broad range of microelectronics and power-semiconductor products (MOSFETs, IGBTs, microcontrollers, analog ICs, sensors, etc.). Headquartered in Geneva with global design and manufacturing operations.

Application

STB45N65M5 is a 650 V N‑channel power MOSFET. Common applications:
- Offline switch‑mode power supplies (SMPS), flyback/buck‑boost converters
- LED drivers and AC/DC front ends
- Uninterruptible Power Supplies (UPS) and solar inverters
- Motor drives and motor inverter circuits
- Power-factor correction and other high‑voltage switching stages in power electronics