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STD1NK80ZT4
MOSFET N-CH 800V 1A DPAK
- 제조업체
- Mfr.부분 #STD1NK80ZT4
- 패키지 TO-252-3
- 데이터시트 STD1NK80ZT4 DataSheet
- 재고 있음2564
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사양
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | SuperMESH™ |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 800 V |
| Current-ContinuousDrain(Id)@25°C | 1A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 16Ohm @ 500mA, 10V |
| Vgs(th)(Max)@Id | 4.5V @ 50µA |
| GateCharge(Qg)(Max)@Vgs | 7.7 nC @ 10 V |
| Vgs(Max) | ±30V |
| InputCapacitance(Ciss)(Max)@Vds | 160 pF @ 25 V |
| PowerDissipation(Max) | 45W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | DPAK |
개요
Description
Key characteristics of the STD1NK80ZT4 include a low on-resistance, which minimizes power loss during operation, and a fast switching speed, enhancing efficiency in electronic circuits. It typically comes in a TO-220 package, allowing for effective heat dissipation.
The MOSFET is also characterized by its ruggedness and reliability, making it a preferred choice for engineers designing circuits subject to high voltages and currents. Its ability to operate at high temperatures further enhances its usability in demanding environments. Overall, the STD1NK80ZT4 is a versatile component in the realm of power electronics.
Features
1. Voltage Rating: Maximum drain-source voltage (V_DS) of 800V, making it suitable for high-voltage applications.
2. Current Rating: Continuous drain current (I_D) of 1.6A at 25°C, offering reliable performance in power conversion tasks.
3. Low On-Resistance: With a maximum R_DS(on) of around 0.8Ω, it minimizes conduction losses, increasing overall efficiency.
4. High-Speed Switching: Fast switching capabilities, ideal for applications like switching power supplies and motor control.
5. Thermal Performance: Good thermal stability with a maximum junction temperature of 150°C, ensuring operation in demanding environments.
6. Package Type: Available in a TO-220 package, facilitating easy heat dissipation and convenient mounting.
These features make the STD1NK80ZT4 suitable for a variety of industrial and consumer electronics applications, especially where high voltage and efficiency are critical.
Package
Pinout
1. Gate (G): This pin controls the MOSFET's on/off state. Applying a voltage to this pin allows current to flow between the drain and source.
2. Drain (D): This pin is where the load is connected. Current flows from the drain to the source when the MOSFET is turned on.
3. Source (S): This pin is connected to ground or the negative side of the load. It is where the current exits the MOSFET when it is in the conducting state.
The STD1NK80ZT4 is designed for applications requiring high voltage handling (up to 800V) and can handle significant current (up to 1A), making it suitable for power management and switching applications.
Manufacturer
Application
Equivalent
1. IRF840
2. STP8NK80Z
3. FQD8N80C
4. MTP8N80E
5. IXFH44N80P
Always verify specifications like voltage, current, Rds(on), and package type to ensure compatibility.
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