이미지는 참조용만

STD3NK80Z-1

Name: STD3NK80Z-1
Rating: 4.7 (12 reviews)

MOSFET N-CH 800V 2.5A IPAK

제조업체
Mfr.부분 #STD3NK80Z-1
패키지
데이터시트 STD3NK80Z-1 DataSheet
재고 있음12360

+BOM은 RFQ는

100% 원래 &새로운

배송 준비 24 시간

365 일 보장

RFQ 및더 많은 할인

사양

Series	SuperMESH™
Part Status	Active
Base Product Number	STD3NK80
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	800 V
Current - Continuous Drain (Id) @ 25°C	2.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	4.5Ohm @ 1.25A, 10V
Vgs(th) (Max) @ Id	4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs	19 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	485 pF @ 25 V
Power Dissipation (Max)	70W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-251 (IPAK)
Package	TO-251-3 Short Leads, IPAK, TO-251AA
Packaging	Tube

개요

Description

The STD3NK80Z-1 is a high-voltage N-channel MOSFET designed for power switching applications. It features a maximum drain-source voltage (V_DS) of 800V and a continuous drain current (I_D) rating of 3A. This device is typically used in applications such as power supplies, motor control, and lighting systems where efficient switching and high voltage handling are crucial.
Key specifications include a low on-resistance (R_DS(on)), which minimizes power loss during operation, and a high-speed switching capability, making it suitable for fast applications. The STD3NK80Z-1 is housed in a TO-220 package, facilitating effective thermal management and easy mounting on heat sinks.
Its gate threshold voltage (V_GS(th)) is designed to allow for easy interfacing with standard control voltages, making it user-friendly for circuit designers. Overall, the STD3NK80Z-1 is a versatile component for various high-power applications requiring a balance between efficiency, voltage endurance, and reliability.

Features

The STD3NK80Z-1 is an N-channel MOSFET designed for high-voltage applications, featuring a maximum drain-source voltage (V_DS) of 800V and a continuous drain current (I_D) of 3A at 25°C. Key features include:
1. Low On-Resistance (R_DS(on)): Typically around 1.2 ohms, which helps reduce power losses and improve efficiency.
2. High-Speed Switching: Suitable for applications requiring fast switching times, enhancing overall performance in circuits like power supplies and motor drives.
3. Thermal Performance: With a junction temperature range of -55°C to +150°C, it is designed to handle demanding thermal environments.
4. Gate Threshold Voltage: Typically between 2V and 4V, facilitating easy drive with standard logic levels.
5. Package Type: Available in TO-220, enhancing ease of heat dissipation.
These features make the STD3NK80Z-1 suitable for a variety of applications, including power converters, switch-mode power supplies, and other high-voltage switching applications.

Package

The STD3NK80Z-1 is typically packaged in a TO-220 or DPAK package type, which is a common configuration for power MOSFETs, allowing for efficient heat dissipation and easy mounting on PCBs.

Pinout

The STD3NK80Z-1 is an N-channel power MOSFET with a total of three pins. The pin configuration is as follows:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate allows current to flow between the drain and source.
2. Drain (D): This pin is connected to the load and is where the current flows out when the MOSFET is turned on.
3. Source (S): This pin is connected to the ground or the negative side of the power supply. It completes the circuit with the drain when the MOSFET is activated.
The STD3NK80Z-1 is designed for high-voltage applications, with a maximum drain-source voltage (V_DS) of 800V and a continuous drain current (I_D) of 3A. It is commonly used in switch-mode power supplies and other applications where high efficiency and fast switching are required.

Manufacturer

The STD3NK80Z-1 is manufactured by STMicroelectronics, a global semiconductor company. STMicroelectronics specializes in designing and manufacturing a wide range of semiconductor solutions, including microcontrollers, power management devices, and discrete components. Founded in 1987 and headquartered in Switzerland, the company serves various markets, including automotive, industrial, consumer electronics, and communication. STMicroelectronics is known for its innovation and commitment to sustainability, providing products that enhance energy efficiency and performance across numerous applications.

Application

The STD3NK80Z-1 is an N-channel MOSFET primarily used in high-voltage applications such as power supplies, motor control, and industrial automation. Its features make it suitable for switching and amplifying signals in circuits, including DC-DC converters and inverters. Additionally, it is utilized in lighting control and automotive systems due to its efficiency and thermal performance.

Equivalent

The STD3NK80Z-1 is an N-channel MOSFET with a maximum voltage rating of 800V and a continuous drain current of 3A. Equivalent products include the IRF840, STP3NK80Z, and MTP3N80E. Always verify specifications like R_DS(on), gate threshold voltage, and package type for compatibility in your application.