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STD3NK80ZT4
MOSFET N-CH 800V 2.5A DPAK
- 제조업체
- Mfr.부분 #STD3NK80ZT4
- 패키지 TO-252-3,DPAK(2Leads+Tab),SC-63
- 데이터시트 STD3NK80ZT4 DataSheet
- 재고 있음6153
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사양
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | SuperMESH™ |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 800 V |
| Current-ContinuousDrain(Id)@25°C | 2.5A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 4.5Ohm @ 1.25A, 10V |
| Vgs(th)(Max)@Id | 4.5V @ 50µA |
| GateCharge(Qg)(Max)@Vgs | 19 nC @ 10 V |
| Vgs(Max) | ±30V |
| InputCapacitance(Ciss)(Max)@Vds | 485 pF @ 25 V |
| PowerDissipation(Max) | 70W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | DPAK |
개요
Description
Key characteristics include a fast switching speed, which allows for efficient operation in applications such as power supplies, converters, and motor control. The device is housed in a TO-220 package, facilitating effective heat dissipation.
Ideal for use in high-speed and high-efficiency circuits, the STD3NK80ZT4 is commonly employed in industrial and consumer electronics, making it a versatile component in modern electronic designs. Always refer to the manufacturer's datasheet for detailed specifications, thermal management guidelines, and safe operating areas.
Features
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 800V, allowing it to handle high-voltage systems.
2. Current Rating: The continuous drain current (I_D) is 3A, making it suitable for medium-power applications.
3. Low On-Resistance: The on-resistance (R_DS(on)) is typically low, which minimizes power loss during operation and improves efficiency.
4. Gate Threshold Voltage: The gate-source threshold voltage (V_GS(th)) provides reliable switching characteristics.
5. Fast Switching: Designed for fast switching applications, it is ideal for use in switch-mode power supplies and motor control.
6. Thermal Stability: The device features excellent thermal stability with a good thermal resistance, supporting robust operation under high temperatures.
Overall, the STD3NK80ZT4 is a versatile MOSFET suitable for various applications requiring high voltage and efficient power management.
Package
Pinout
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate allows current to flow between the drain and source.
2. Drain (D): This is the terminal through which the current flows into the MOSFET from the load.
3. Source (S): This terminal is where the current exits the MOSFET to ground or the negative side of the load.
The STD3NK80ZT4 is rated for a maximum drain-source voltage (VDS) of 800V and a continuous drain current (ID) of 3A, making it suitable for high-voltage applications.
Manufacturer
Application
Equivalent
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