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STD65N55F3
MOSFET N-CH 55V 80A DPAK
- 제조업체
- Mfr.부분 #STD65N55F3
- 패키지 TO-252-3
- 데이터시트 STD65N55F3 DataSheet
- 재고 있음4217
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사양
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | STripFET™ |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 55 V |
| Current-ContinuousDrain(Id)@25°C | 80A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 8.5mOhm @ 32A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 45 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 2200 pF @ 25 V |
| PowerDissipation(Max) | 110W (Tc) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | DPAK |
개요
Description
Key specifications include a low on-resistance (R_DS(on)), typically around 0.018 ohms, which reduces power losses during operation. The device also has a fast switching speed, allowing for efficient operation in high-frequency applications. The MOSFET comes in a TO-220 package, providing good thermal dissipation capabilities, essential for handling high power levels.
The STD65N55F3 is favored in designs that require reliability and performance, such as power supplies, converters, and automotive applications. It operates effectively within a wide temperature range and is built to withstand harsh environmental conditions. Overall, it is a versatile component for engineers seeking robust performance in their electronic designs.
Features
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 55V, making it suitable for various power switching applications.
2. Current Handling: The device can handle continuous drain currents up to 65A, depending on the thermal conditions.
3. R_DS(on): It boasts a low on-resistance (R_DS(on)) of around 18 mΩ, which helps reduce conduction losses and improve efficiency.
4. Fast Switching: The MOSFET is designed for fast switching capabilities, which is beneficial in high-frequency applications.
5. Thermal Performance: With a robust package design, it provides excellent thermal performance, allowing for better heat dissipation.
6. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is typically between 2-4V, enabling it to be driven by standard logic-level signals.
7. Applications: Suitable for use in DC-DC converters, motor drives, and power management systems.
Overall, the STD65N55F3 is an efficient and versatile component for power electronics.
Package
Pinout
1. Gate (G): This pin controls the switching of the MOSFET. Applying a voltage to the gate allows current to flow from the drain to the source.
2. Drain (D): This pin is where the load is connected. Current flows into the drain when the MOSFET is turned on.
3. Source (S): This pin is connected to ground or the negative side of the power supply. Current exits through the source when the MOSFET is conducting.
The STD65N55F3 is designed for high-efficiency switching applications, with a maximum drain-source voltage (V_DS) of 55V and a continuous drain current (I_D) of 65A. Its low on-resistance (R_DS(on)) ensures minimal power loss during operation.
Manufacturer
Application
Equivalent
1. IRF3205 - 55V, 110A
2. STP55NF06 - 60V, 55A
3. BSC055N65 - 65V, 55A
4. FQP30N60C - 60V, 30A
Always check specific parameters like RDS(on) and package types for compatibility.
배송
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배송 요금 참조 (DHL/FedEx):
DHL은: 배송 비용은 $25-$45 (0.5kg)에서 2-5 영업일의 추정적 배달 시간이 있습니다.
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UPS는: 배송 비용은 $25-$45 (0.5kg)에서 3-7 영업일의 추정적 배달 시간을 가지고 있습니다.
TNT는: 배송 비용은 $25-$65 (0.5kg)에서 3-7 영업일의 추정적 배달 시간을 가지고 있습니다.
EMS는: 배송 비용은 $30-$50 (0.5kg)에서 7-15 영업일의 추정적 배달 시간을 제공합니다.
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