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STD8N65M5
MOSFET N-CH 650V 7A DPAK
- 제조업체
- Mfr.부분 #STD8N65M5
- 패키지
- 데이터시트 STD8N65M5 DataSheet
- 재고 있음7683
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사양
| Supplier | STMicroelectronics |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | MDmesh™ V |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 650 V |
| Current-ContinuousDrain(Id)@25°C | 7A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 600mOhm @ 3.5A, 10V |
| Vgs(th)(Max)@Id | 5V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 15 nC @ 10 V |
| Vgs(Max) | ±25V |
| InputCapacitance(Ciss)(Max)@Vds | 690 pF @ 100 V |
| PowerDissipation(Max) | 70W (Tc) |
| OperatingTemperature | 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | DPAK |
개요
Description
Key features include a maximum drain-source voltage (VDS) of 650V, continuous drain current (ID) of 8A, and low on-resistance (RDS(on)), which enhances efficiency and thermal performance. The device is housed in a TO-220 package, making it suitable for heat dissipation in high-power applications. Its gate threshold voltage (VGS(th)) is designed for easy drive with standard logic levels, providing a straightforward interface with microcontrollers or other driving circuitry.
The STD8N65M5's combination of high voltage handling, efficiency, and robustness makes it a popular choice in modern electronic designs requiring reliable power management.
Features
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 650V, making it suitable for high-voltage applications.
2. Current Rating: The device can handle continuous drain current (I_D) of 8A at a temperature of 25°C, providing reliable performance in various settings.
3. On-Resistance (R_DS(on)): It features a low on-state resistance of about 0.8 ohms, which minimizes conduction losses and enhances efficiency.
4. Gate Threshold Voltage (V_GS(th)): The gate threshold voltage is between 2V to 4V, ensuring compatibility with standard driving circuits.
5. Thermal Management: It has a maximum junction temperature of 150°C, allowing it to operate in demanding thermal conditions.
6. Package Type: Typically available in TO-220 or similar packages, facilitating easy heat dissipation.
These features make the STD8N65M5 suitable for applications such as power supplies, motor control, and renewable energy systems.
Package
Pinout
1. Gate (G) - This pin is used to control the MOSFET. A voltage applied to the gate allows current to flow from the drain to the source.
2. Drain (D) - The drain pin is where the load is connected. Current flows from the drain to the source when the MOSFET is turned on.
3. Source (S) - This pin is connected to ground or the lowest potential in the circuit. It serves as the exit point for the current when the device is operational.
The STD8N65M5 is designed for applications like switch-mode power supplies, motor control, and other high-voltage switching applications, with a maximum drain-source voltage (V_DS) of 650V and a continuous drain current (I_D) rating of 8A.
Manufacturer
Application
Equivalent
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