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STF10LN80K5
MOSFET N-CH 800V 8A TO220FP
- 제조업체
- Mfr.부분 #STF10LN80K5
- 패키지 TO-220FP
- 데이터시트 STF10LN80K5 DataSheet
- 재고 있음4784
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사양
| Package | Tube |
| Series | MDmesh™ |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 800 V |
| Current-ContinuousDrain(Id)@25°C | 8A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 630mOhm @ 4A, 10V |
| Vgs(th)(Max)@Id | 5V @ 100µA |
| GateCharge(Qg)(Max)@Vgs | 15 nC @ 10 V |
| Vgs(Max) | ±30V |
| InputCapacitance(Ciss)(Max)@Vds | 427 pF @ 100 V |
| PowerDissipation(Max) | 25W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-220FP |
개요
Description
The K5 designation indicates advanced features like reduced gate charge, which improves switching speed and efficiency. This MOSFET’s robust construction allows it to handle high voltage transients, making it reliable in demanding environments. Its characteristics make it an excellent choice for applications requiring efficient energy conversion and minimal power losses.
Features
1. Voltage Rating: 800V maximum drain-source voltage (Vds), suitable for high-voltage applications.
2. Current Rating: 10A continuous drain current (Id), allowing for significant load handling.
3. Rds(on): Low on-state resistance (typically around 0.8 ohms), which minimizes conduction losses and improves efficiency.
4. Gate Threshold Voltage: Moderate gate threshold (2-4V), enabling easy drive from low-voltage circuits.
5. Fast Switching: Designed for fast switching speeds, making it suitable for applications like power supplies and motor drives.
6. Package: Available in TO-220 package, facilitating good thermal management.
7. Applications: Ideal for use in switch-mode power supplies (SMPS), inverters, and other power electronic circuits.
Overall, the STF10LN80K5 offers a blend of high voltage, low on-resistance, and efficient switching, making it a versatile choice for power management solutions.
Package
Pinout
1. Gate (G): This pin controls the MOSFET's switching. Applying a voltage to this pin turns the device on, allowing current to flow from the drain to the source.
2. Drain (D): This pin is where the current enters the MOSFET. It is connected to the load in the circuit.
3. Source (S): This pin is where the current exits the MOSFET. It is typically connected to ground or the negative side of the power supply in a common-source configuration.
The STF10LN80K5 is designed for high-voltage applications, with a maximum drain-source voltage of 800V and a maximum continuous drain current of 10A. Its features make it suitable for use in power management and switching applications.
Manufacturer
Application
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