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STF10N95K5
MOSFET N-CH 950V 8A TO220FP
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- Mfr.부분 #STF10N95K5
- 패키지
- 데이터시트 STF10N95K5 DataSheet
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사양
| Supplier | STMicroelectronics |
| Package | Tube |
| Series | SuperMESH5™ |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 950 V |
| Current-ContinuousDrain(Id)@25°C | 8A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 800mOhm @ 4A, 10V |
| Vgs(th)(Max)@Id | 5V @ 100µA |
| GateCharge(Qg)(Max)@Vgs | 22 nC @ 10 V |
| Vgs(Max) | ±30V |
| InputCapacitance(Ciss)(Max)@Vds | 630 pF @ 100 V |
| PowerDissipation(Max) | 30W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-220FP |
개요
Description
Key specifications include a maximum drain-source voltage (Vds) of 100V and a continuous drain current (Id) rating of 10A, which supports robust performance in demanding environments. The device is often packaged in a TO-220 or similar housing, enabling easy heat dissipation.
This MOSFET is characterized by its fast switching capabilities, which improve overall circuit efficiency. Additionally, its high threshold voltage and low gate charge make it compatible with a wide range of gate drive circuits. Overall, the STF10N95K5 is an excellent choice for engineers seeking reliability and performance in power electronic designs.
Features
1. Voltage Rating: Max drain-source voltage (Vds) is 950V, making it suitable for high-voltage applications.
2. Current Rating: Continuous drain current (Id) is 10A, providing sufficient current capacity for many applications.
3. RDS(on): Low on-state resistance, typically around 0.65 ohms, which enhances efficiency and reduces heat generation during operation.
4. Gate Threshold Voltage: Vgs(th) typically between 2V to 4V, ensuring good drive capability from standard logic levels.
5. Package Type: Available in TO-220 and other package types for ease of heat dissipation.
6. Fast Switching: Suitable for high-speed switching applications, making it ideal for power supplies and converters.
7. Thermal Performance: Designed for efficient thermal management, allowing for reliable operation in demanding environments.
These attributes make the STF10N95K5 a versatile choice for various electronic circuits, particularly in power management and conversion applications.
Package
Pinout
1. Gate (G) - This terminal is used to control the MOSFET. Applying a voltage to the gate allows current to flow between the drain and source.
2. Drain (D) - This is the terminal through which the current flows out of the MOSFET when it is switched on.
3. Source (S) - This terminal is connected to the ground or the lower potential in the circuit.
This MOSFET is designed for high-voltage applications with a maximum drain-source voltage (V_DS) of 950V and a continuous drain current (I_D) rating of 10A. Its low on-resistance (R_DS(on)) makes it suitable for efficient power management in various applications, including power supplies and motor controllers.
Manufacturer
Application
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