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STF26NM60N
MOSFET N-CH 600V 20A TO220FP
- 제조업체
- Mfr.부분 #STF26NM60N
- 패키지 TO-220FP
- 데이터시트 STF26NM60N DataSheet
- 재고 있음3950
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사양
| Package | Tube |
| Series | MDmesh™ II |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 600 V |
| Current-ContinuousDrain(Id)@25°C | 20A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 165mOhm @ 10A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 60 nC @ 10 V |
| Vgs(Max) | ±30V |
| InputCapacitance(Ciss)(Max)@Vds | 1800 pF @ 50 V |
| PowerDissipation(Max) | 35W (Tc) |
| OperatingTemperature | 150°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-220FP |
개요
Description
Key characteristics include low on-state resistance (R_DS(on)), which reduces power losses during operation, and fast switching speeds, enhancing efficiency in power conversion applications. The device is typically used in power supplies, motor drivers, and inverters for renewable energy systems.
Its TO-220 package facilitates effective heat dissipation, allowing for reliable performance in demanding environments. Overall, the STF26NM60N combines robustness and efficiency, making it a popular choice among engineers for high-voltage circuit designs.
Features
- Voltage Rating: 600V maximum drain-source voltage (V_DS).
- Current Rating: Continuous drain current (I_D) up to 26A at 25°C.
- R_DS(on): Low on-state resistance (typically 0.32 Ω at V_GS = 10V), which reduces conduction losses.
- Gate Threshold Voltage: V_GS(th) ranges from 2V to 4V, allowing for easier driving with standard logic levels.
- Fast Switching: Designed for high-speed switching applications, minimizing switching losses.
- Package: Available in TO-220, providing effective thermal management.
- Applications: Suitable for switch-mode power supplies, DC-DC converters, motor control, and other high-voltage applications.
Overall, the STF26NM60N offers a balance of high voltage, robust current handling, and low resistance, making it a versatile choice for various power electronic circuits.
Package
Pinout
1. Gate (G): Controls the switching of the MOSFET; receives the input signal.
2. Drain (D): The output terminal where the load is connected; current flows from drain to source when the MOSFET is on.
3. Source (S): Connected to ground or negative voltage; current flows into the source when the MOSFET is conducting.
The standard pin configuration for the STF26NM60N is:
- Pin 1: Gate
- Pin 2: Drain
- Pin 3: Source
- Pin 4: Drain
- Pin 5: Gate
- Pin 6: Source
This MOSFET is designed for high voltage applications, rated for 600V, and is typically used in power management and switching applications.
Manufacturer
Application
1. Switching Power Supplies: For efficient voltage regulation and power conversion.
2. Motor Drives: In electric vehicles and industrial machinery.
3. Inverters: For renewable energy applications like solar power systems.
4. LED Drivers: For efficient control of high-power LED lighting.
5. Audio Amplifiers: In high-performance audio equipment.
Its high voltage and current ratings make it suitable for these applications.
Equivalent
배송
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