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STGD5H60DF
TRENCH GATE FIELD-STOP IGBT, H S
- 제조업체
- Mfr.부분 #STGD5H60DF
- 패키지 TO-252-3
- 데이터시트 STGD5H60DF DataSheet
- 재고 있음6137
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사양
| Package | Tape & Reel (TR),Cut Tape (CT) |
| ProductStatus | Active |
| IGBTType | Trench Field Stop |
| Voltage-CollectorEmitterBreakdown(Max) | 600 V |
| Current-Collector(Ic)(Max) | 10 A |
| Current-CollectorPulsed(Icm) | 20 A |
| Vce(on)(Max)@VgeIc | 1.95V @ 15V, 5A |
| Power-Max | 83 W |
| SwitchingEnergy | 56µJ (on), 78.5µJ (off) |
| InputType | Standard |
| GateCharge | 43 nC |
| Td(on/off)@25°C | 30ns/140ns |
| TestCondition | 400V, 5A, 47Ohm, 15V |
| ReverseRecoveryTime(trr) | 134.5 ns |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
개요
Description
STGD5H60DF typically operates with a maximum gate-source voltage of ±20V and has a current rating that allows it to handle substantial loads. Its compact package design aids in space-saving in PCB layouts. Overall, this MOSFET is ideal for engineers looking for efficient, reliable components to enhance the performance of their electronic designs.
Features
1. Voltage Rating: Typically rated for a maximum drain-source voltage (V_DS) of 60V, making it suitable for medium voltage applications.
2. Current Rating: It can handle high continuous drain current, usually around 60A, allowing it to manage significant power loads.
3. Low On-Resistance (R_DS(on)): Offers low on-resistance, which minimizes conduction losses and improves efficiency in power circuits.
4. Fast Switching Speed: Designed for rapid switching, enhancing performance in high-frequency applications.
5. Thermal Management: Equipped with a robust thermal performance, featuring a suitable package that aids in heat dissipation.
6. Safe Operating Area: Ensures reliable operation within specified limits, contributing to circuit protection.
Overall, the STGD5H60DF is ideal for applications requiring efficient power management and robust performance under varying load conditions.
Package
Pinout
In terms of its pin configuration, the typical arrangement includes:
1. Gate (G) - Controls the switching action.
2. Drain (D) - Connects to the load.
3. Source (S) - Connects to ground or the negative side of the power supply.
4. Body Diode (optional) - May provide reverse current path.
This device operates at high voltages, making it suitable for applications like motor drives, DC-DC converters, and other power-handling tasks. Always refer to the datasheet for specific electrical characteristics and detailed pin configuration.
Manufacturer
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