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STGW60V60DF
IGBT 600V 80A 375W TO247
- 제조업체
- Mfr.부분 #STGW60V60DF
- 패키지 TO-247
- 데이터시트 STGW60V60DF DataSheet
- 재고 있음4464
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사양
| Package | Tube |
| ProductStatus | Active |
| IGBTType | Trench Field Stop |
| Voltage-CollectorEmitterBreakdown(Max) | 600 V |
| Current-Collector(Ic)(Max) | 80 A |
| Current-CollectorPulsed(Icm) | 240 A |
| Vce(on)(Max)@VgeIc | 2.3V @ 15V, 60A |
| Power-Max | 375 W |
| SwitchingEnergy | 750µJ (on), 550µJ (off) |
| InputType | Standard |
| GateCharge | 334 nC |
| Td(on/off)@25°C | 60ns/208ns |
| TestCondition | 400V, 60A, 4.7Ohm, 15V |
| ReverseRecoveryTime(trr) | 74 ns |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Through Hole |
| Package/Case | TO-247-3 |
개요
Description
Key features include a voltage rating of 600V, making it suitable for high-voltage applications, and a maximum continuous drain current of 60A. The device provides excellent thermal stability and can operate at high temperatures, with a low gate charge (Qg) that enables faster switching speeds, improving overall efficiency.
The STGW60V60DF is packaged in a TO-247 format, allowing for efficient heat dissipation. Its robust design makes it ideal for use in various industrial applications, including renewable energy systems and automotive power electronics. Overall, this MOSFET is favored for its reliability, efficiency, and ability to handle demanding electrical conditions.
Features
1. Voltage Rating: 600V, suitable for medium voltage applications.
2. Current Rating: Handles continuous collector current up to 60A.
3. Low Switching Losses: Optimized for efficient performance in high-frequency applications.
4. Thermal Stability: Designed to operate reliably at high temperatures, with a maximum junction temperature of 150°C.
5. Fast Switching Speed: Reduces the overall power losses and enhances efficiency in power conversion systems.
6. Robust Packaging: Available in a TO-247 package, facilitating better heat dissipation and mounting.
7. Built-in Diode: Integrated anti-parallel diode for enhanced operation in inverter applications.
These features make the STGW60V60DF ideal for applications such as motor drives, inverters, and power supplies in industrial and renewable energy sectors.
Package
Pinout
1. Gate (G): This pin controls the switching of the MOSFET. A voltage applied to the gate allows current to flow from the drain to the source, turning the MOSFET on.
2. Drain (D): This is the terminal through which the load current enters the MOSFET. When the MOSFET is on, current flows from the drain to the source.
3. Source (S): This pin is connected to the ground or the lower potential side of the circuit. When the MOSFET is activated, current exits through the source.
The STGW60V60DF is designed for high-voltage applications, with a maximum drain-source voltage (VDS) of 600V and a continuous current rating suitable for various power electronic applications.
Manufacturer
Application
Equivalent
1. Infineon IGBT: FGH60N60SFD
2. ON Semiconductor IGBT: MBRF60-45
3. Nexperia IGBT: PIMF12060E
4. Texas Instruments IGBT: CSD19540KCS
Always verify specifications for exact compatibility in your application.
배송
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배송 요금 참조 (DHL/FedEx):
DHL은: 배송 비용은 $25-$45 (0.5kg)에서 2-5 영업일의 추정적 배달 시간이 있습니다.
FedEx는: 배송 비용은 $25-$40 (0.5kg)에서 3-7 영업일의 추정적 배달 시간을 가지고 있습니다.
UPS는: 배송 비용은 $25-$45 (0.5kg)에서 3-7 영업일의 추정적 배달 시간을 가지고 있습니다.
TNT는: 배송 비용은 $25-$65 (0.5kg)에서 3-7 영업일의 추정적 배달 시간을 가지고 있습니다.
EMS는: 배송 비용은 $30-$50 (0.5kg)에서 7-15 영업일의 추정적 배달 시간을 제공합니다.
등록된 항공우편: 배송 비용은 $2-$4 (0.1kg), 예상 배달 시간 5-20 영업일.
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