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STGWA40H65DFB2
TRENCH GATE FIELD-STOP 650 V 40
- 제조업체
- Mfr.부분 #STGWA40H65DFB2
- 패키지 TO-247 long leads
- 데이터시트 STGWA40H65DFB2 DataSheet
- 재고 있음7127
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365 일 보장
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사양
| Package | Tube |
| ProductStatus | Active |
| IGBTType | Trench Field Stop |
| Voltage-CollectorEmitterBreakdown(Max) | 650 V |
| Current-Collector(Ic)(Max) | 72 A |
| Current-CollectorPulsed(Icm) | 160 A |
| Vce(on)(Max)@VgeIc | 2V @ 15V, 40A |
| Power-Max | 230 W |
| SwitchingEnergy | 765µJ (on), 410µJ (off) |
| InputType | Standard |
| GateCharge | 153 nC |
| Td(on/off)@25°C | 18ns/72ns |
| TestCondition | 400V, 40A, 4.7Ohm, 15V |
| ReverseRecoveryTime(trr) | 75 ns |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Through Hole |
| Package/Case | TO-247-3 |
개요
Description
The device is built using advanced technology to ensure fast switching speeds, making it ideal for applications requiring rapid turn-on and turn-off cycles. Additionally, the STGWA40H65DFB2 is encapsulated in a TO-247 package, which facilitates effective heat dissipation, ensuring reliable performance under load. Its robust design is suitable for automotive and industrial environments, offering a balance of performance, efficiency, and thermal management. Overall, the STGWA40H65DFB2 is an excellent choice for designers seeking high-efficiency solutions in demanding power applications.
Features
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 650V, making it suitable for high-voltage applications.
2. Current Handling: The device can handle continuous drain current (I_D) of up to 40A, allowing it to manage significant power loads.
3. Low On-Resistance: It offers a low R_DS(on) of approximately 0.55 ohms, which reduces power losses and enhances efficiency.
4. Fast Switching: The MOSFET is designed for rapid switching, enabling better performance in high-frequency applications.
5. Thermal Performance: It features a high junction temperature rating and good thermal dissipation characteristics.
6. TO-220 Package: The device is housed in a TO-220 package, which supports easy mounting and heatsinking.
These features make the STGWA40H65DFB2 suitable for use in various applications, including power supplies, motor drives, and energy conversion systems.
Package
Pinout
1. Gate (G) - Controls the switching of the MOSFET.
2. Drain (D) - The terminal through which the main current flows out.
3. Source (S) - The terminal through which the current enters the MOSFET.
Typically, in a standard package layout, the pins are arranged to facilitate easy connection in circuit designs. This device is designed for high-voltage applications and features low on-resistance, making it suitable for various switching and amplification applications in power management circuits.
Manufacturer
Application
Equivalent
1. Infineon IGBT: IKW40N65H3
2. ON Semiconductor: MGD20N65D1
3. NXP (formerly Freescale): FGA40N65FDT
4. Fairchild: FGA40N65UFD
Always check datasheets for specific electrical characteristics to ensure compatibility.
배송
배송 방법We
DHL, FedEx, TNT, UPS 또는 선택한 다른 운송업체를 통해 글로벌 배송 서비스를 제공합니다.
배송 요금 참조 (DHL/FedEx):
DHL은: 배송 비용은 $25-$45 (0.5kg)에서 2-5 영업일의 추정적 배달 시간이 있습니다.
FedEx는: 배송 비용은 $25-$40 (0.5kg)에서 3-7 영업일의 추정적 배달 시간을 가지고 있습니다.
UPS는: 배송 비용은 $25-$45 (0.5kg)에서 3-7 영업일의 추정적 배달 시간을 가지고 있습니다.
TNT는: 배송 비용은 $25-$65 (0.5kg)에서 3-7 영업일의 추정적 배달 시간을 가지고 있습니다.
EMS는: 배송 비용은 $30-$50 (0.5kg)에서 7-15 영업일의 추정적 배달 시간을 제공합니다.
등록된 항공우편: 배송 비용은 $2-$4 (0.1kg), 예상 배달 시간 5-20 영업일.
지불
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