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STGWT80H65DFB
IGBT 650V 120A 469W TO3P-3L
- 제조업체
- Mfr.부분 #STGWT80H65DFB
- 패키지 TO-3P
- 데이터시트 STGWT80H65DFB DataSheet
- 재고 있음6148
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배송 준비 24 시간
365 일 보장
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사양
| Package | Tube |
| ProductStatus | Active |
| IGBTType | Trench Field Stop |
| Voltage-CollectorEmitterBreakdown(Max) | 650 V |
| Current-Collector(Ic)(Max) | 120 A |
| Current-CollectorPulsed(Icm) | 240 A |
| Vce(on)(Max)@VgeIc | 2V @ 15V, 80A |
| Power-Max | 469 W |
| SwitchingEnergy | 2.1mJ (on), 1.5mJ (off) |
| InputType | Standard |
| GateCharge | 414 nC |
| Td(on/off)@25°C | 84ns/280ns |
| TestCondition | 400V, 80A, 10Ohm, 15V |
| ReverseRecoveryTime(trr) | 85 ns |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Through Hole |
| Package/Case | TO-3P-3, SC-65-3 |
개요
Description
Key features include low on-resistance (RDS(on)), which minimizes power losses during operation, and fast switching speeds that enhance efficiency in switching applications. The device is housed in a TO-220 package, facilitating good thermal performance and ease of heatsinking.
Typically, the STGWT80H65DFB is utilized in scenarios where efficiency and thermal management are critical, and it is favored in designs requiring robust performance under high-stress conditions. Its compatibility with standard driver circuits also makes it a versatile choice for engineers looking to optimize their power electronic solutions.
Features
1. Low Rds(on): This ensures reduced conduction losses and enhanced efficiency during operation.
2. Fast switching speed: Facilitates high-frequency operation, minimizing switching losses.
3. Thermal stability: The device is optimized for thermal performance, allowing better heat dissipation.
4. Avalanche rated: Provides additional reliability in transient conditions.
5. TO-220 package: Offers easy mounting and heat sinking options for better thermal management.
Overall, the STGWT80H65DFB is ideal for applications requiring high efficiency and reliability in power electronics.
Package
Pinout
1. Gate (G) - Controls the operation of the MOSFET.
2. Drain (D) - The terminal through which current flows out of the MOSFET.
3. Source (S) - The terminal through which current flows into the MOSFET.
4-8. Additional Drain/Source Pins - These may be used for enhanced current handling or thermal performance.
The key functions of the pins are as follows:
- Gate (G): Used to switch the MOSFET on and off by applying a voltage.
- Drain (D): Connected to the load in a typical application.
- Source (S): Connected to the ground or negative supply in a circuit.
This MOSFET is designed for applications requiring high efficiency and fast switching, making it suitable for power converters, motor drives, and other high-frequency applications.
Manufacturer
Application
Equivalent
배송
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배송 요금 참조 (DHL/FedEx):
DHL은: 배송 비용은 $25-$45 (0.5kg)에서 2-5 영업일의 추정적 배달 시간이 있습니다.
FedEx는: 배송 비용은 $25-$40 (0.5kg)에서 3-7 영업일의 추정적 배달 시간을 가지고 있습니다.
UPS는: 배송 비용은 $25-$45 (0.5kg)에서 3-7 영업일의 추정적 배달 시간을 가지고 있습니다.
TNT는: 배송 비용은 $25-$65 (0.5kg)에서 3-7 영업일의 추정적 배달 시간을 가지고 있습니다.
EMS는: 배송 비용은 $30-$50 (0.5kg)에서 7-15 영업일의 추정적 배달 시간을 제공합니다.
등록된 항공우편: 배송 비용은 $2-$4 (0.1kg), 예상 배달 시간 5-20 영업일.
지불
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