STH240N10F7-6

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STH240N10F7-6

MOSFET N-CH 100V 180A H2PAK-6

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사양

Series STripFET™ F7
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 180A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 2.5mOhm @ 60A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 160 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 11550 pF @ 25 V
Power Dissipation (Max) 300W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package H2PAK-6
Package / Case TO-263-7, D2PAK (6 Leads + Tab)
Base Product Number STH240

개요

Description

STH240N10F7-6 is a high-performance N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for power conversion applications. It features a low on-resistance, enabling efficient switching and minimal power loss, which is crucial in high-frequency operations. With a voltage rating of 100V and a continuous drain current of up to 240A, it is suitable for applications in power supplies, DC-DC converters, and motor drives.
The device incorporates advanced technology to enhance thermal performance and reliability. Its TO-220 package allows for easy heat dissipation, making it effective in high-temperature environments. The STH240N10F7-6 also includes a fast switching capability, which improves the overall efficiency of power circuits.
In summary, the STH240N10F7-6 is a versatile and robust MOSFET ideal for various power management applications, offering low resistance, high efficiency, and reliability.

Features

The STH240N10F7-6 is an N-channel MOSFET designed for high-efficiency power applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 100V, making it suitable for various high-voltage applications.
2. Current Rating: The continuous drain current (I_D) is rated at 240A, allowing it to handle significant loads.
3. R_DS(on): It offers a low on-resistance of 7.6 mΩ, minimizing conduction losses and enhancing efficiency.
4. Gate Threshold Voltage: The gate-source threshold voltage (V_GS(th)) is between 2V to 4V, allowing for easy driving with standard logic levels.
5. High-Speed Switching: Designed for fast switching applications, it reduces turn-on and turn-off losses.
6. Package Type: Available in a TO-220 package, providing effective heat dissipation for high-power applications.
7. Applications: Suitable for use in motor drives, power supplies, and renewable energy systems.
These features make the STH240N10F7-6 an excellent choice for demanding power electronic applications.

Package

The STH240N10F7-6 is typically packaged in a TO-220 form factor. This package type features a metal tab for heat dissipation and is suitable for high-power applications, allowing for easy mounting on heatsinks.

Pinout

The STH240N10F7-6 is an N-channel MOSFET manufactured by STMicroelectronics. It comes in a TO-220 package, which typically has three pins. The pin configuration is as follows:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to this pin allows current to flow between the drain and source.

2. Drain (D): This is the main current-carrying terminal. Current flows from the drain to the source when the device is turned on.
3. Source (S): This terminal is the output side of the MOSFET where the current exits.
The STH240N10F7-6 is designed for high-speed switching applications and can handle a maximum drain-source voltage (V_DS) of 100V and a continuous drain current (I_D) of up to 240A under specific conditions. It is suitable for power management and converter applications.

Manufacturer

The STH240N10F7-6 is manufactured by STMicroelectronics, a global semiconductor company. STMicroelectronics designs and manufactures a wide range of products, including microcontrollers, sensors, and power management devices, among others. The company is known for its focus on innovation in technology, serving various sectors such as automotive, industrial, consumer electronics, and telecommunications. Founded in 1987 and headquartered in Geneva, Switzerland, STMicroelectronics operates in multiple countries and is recognized for its commitment to sustainability and energy-efficient solutions.

Application

The STH240N10F7-6 is a power MOSFET used in various applications including power supplies, motor drives, and converters. Its high efficiency and fast switching capabilities make it suitable for industrial automation, renewable energy systems, and electric vehicles. It is also utilized in high-frequency applications and as a switch in DC-DC converters, enhancing performance in telecom and consumer electronics.

Equivalent

The STH240N10F7-6 is an N-channel MOSFET commonly used in power applications. Equivalent products include the STP240N10F7, IRF240, and FDP240N10. Always verify specifications such as voltage, current, RDS(on), and package type to ensure compatibility in your specific application.

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