STL24N60M2

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STL24N60M2

MOSFET N-CH 600V 18A PWRFLAT HV

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사양

Supplier STMicroelectronics
Package Tape & Reel (TR),Cut Tape (CT)
Series MDmesh™ II Plus
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 600 V
Current-ContinuousDrain(Id)@25°C 18A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 210mOhm @ 9A, 10V
Vgs(th)(Max)@Id 4V @ 250µA
GateCharge(Qg)(Max)@Vgs 29 nC @ 10 V
Vgs(Max) ±25V
InputCapacitance(Ciss)(Max)@Vds 1060 pF @ 100 V
PowerDissipation(Max) 125W (Tc)
OperatingTemperature 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage PowerFlat™ (8x8) HV

개요

Description

STL24N60M2 is STMicroelectronics’ high‑voltage N‑channel power MOSFET. It uses ST’s M2 trench technology and is intended for switching-power applications such as offline power supplies, inverters, and motor drives. The device is designed for high voltage (around 600 V) with rugged switching performance, including avalanche tolerance and reasonable gate charge for efficient drive. Exact electrical ratings (Rds(on), Id, Vth, Qgs) and package options vary by variant, so consult the specific datasheet for the precise values and thermal/pinout details.

Features

ST STL24N60M2 features (concise):
- N-channel enhancement-mode power MOSFET
- VDS: 600 V
- Continuous drain current: up to about 24 A (depends on package/thermal)
- RDS(on): roughly 0.9–1.2 Ω (typical at VGS = 10 V; not guaranteed at 4.5 V)
- Gate threshold: ~2–4 V
- Gate drive: 10 V recommended for lowest RDS(on)
- Fast switching with moderate gate charge
- Avalanche rugged with specified energy rating
- Integrated body diode with rugged reverse conduction
- Packages: surface-mount D²PAK/IPAK variants (RoHS compliant)
- Operating temp: -55°C to +150°C
Typical applications: offline switch-mode power supplies, high-voltage DC-DC converters, motor drives.

Package

The STL24N60M2 is supplied in a TO-220 (3‑lead, through‑hole) package.

Pinout

Pin count: 3 electrical pins (plus a metal tab/heat sink).
Pin functions (front view, pins down, left→right):
- Pin 1 — Gate: control input (voltage applied to switch MOSFET).
- Pin 2 — Drain: main high-voltage input/output (also tied to the metal tab/heat sink).
- Pin 3 — Source: return/low-side terminal.
Device type: N‑channel, 600 V power MOSFET intended for high‑voltage switching (STL24N60M2).

Manufacturer

The STL24N60M2 is manufactured by STMicroelectronics. STMicroelectronics is a multinational semiconductor company (headquartered in Geneva, Switzerland) that designs and manufactures integrated circuits and discrete semiconductor devices—such as power MOSFETs, microcontrollers, sensors, analog and mixed-signal chips—for consumer, industrial, automotive and communications markets.

Equivalent

Do you need direct drop‑in replacements (same package/pinout) or just MOSFETs with similar electrical specs (600 V, ~24 A, comparable RDS(on))? If drop‑in, please confirm the package (TO‑220/TO‑247) and key parameters to match, and I’ll list exact equivalents.

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