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STL36N55M5
MOSFET N-CH 550V 22.5A 4PWRFLAT
- 제조업체
- Mfr.부분 #STL36N55M5
- 패키지
- 데이터시트 STL36N55M5 DataSheet
- 재고 있음9899
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365 일 보장
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사양
| Supplier | STMicroelectronics |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | MDmesh™ V |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 550 V |
| Current-ContinuousDrain(Id)@25°C | 22.5A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 90mOhm @ 16.5A, 10V |
| Vgs(th)(Max)@Id | 5V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 62 nC @ 10 V |
| Vgs(Max) | ±25V |
| InputCapacitance(Ciss)(Max)@Vds | 2670 pF @ 100 V |
| PowerDissipation(Max) | 2.8W (Ta), 150W (Tc) |
| OperatingTemperature | 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | PowerFlat™ (8x8) HV |
개요
Description
This MOSFET offers low on-resistance (R_DS(on)), which reduces conduction losses and enhances efficiency in power applications. The device is available in a TO-220 package, providing good thermal performance and ease of mounting.
Key specifications include a threshold voltage (V_GS(th)) of 2 to 4 volts, a maximum gate-source voltage (V_GS) of ±20 volts, and a fast switching speed, which minimizes switching losses.
Overall, the STL36N55M5 is ideal for applications requiring high efficiency, such as renewable energy systems, electric vehicles, and industrial automation. Always refer to the manufacturer's datasheet for detailed electrical characteristics and thermal management guidelines.
Features
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 55V.
2. Current Rating: Supports a continuous drain current (I_D) of up to 36A, making it suitable for high-current applications.
3. Low On-Resistance: It offers a low R_DS(on) typically around 0.014 ohms, ensuring efficient power conduction and minimal heat generation.
4. Fast Switching: The device is capable of fast switching speeds, enhancing performance in high-frequency applications.
5. Thermal Performance: It has a maximum junction temperature of 150°C, allowing operation in demanding thermal environments.
6. TO-220 Package: Comes in a robust TO-220 package, facilitating effective heat dissipation and ease of mounting.
7. Gate Threshold Voltage: Features a low gate threshold voltage, ensuring compatibility with various drive circuits.
These characteristics make the STL36N55M5 suitable for power management, motor control, and other high-efficiency applications.
Package
Pinout
1. Gate (G): Controls the MOSFET's switching; applies voltage to turn on the device.
2. Drain (D): Connects to the load; current flows from the drain to source when the MOSFET is on.
3. Source (S): Connected to ground or negative supply; current leaves the MOSFET from the source.
4. Body Diode (integrated): Provides intrinsic protection against reverse current.
5. NC (Not Connected): This pin is typically unused in the package.
The STL36N55M5 is designed for applications requiring high efficiency and fast switching, making it suitable for power management in various electronic circuits.
Manufacturer
Application
Equivalent
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