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STP100N8F6
MOSFET N-CH 80V 100A TO220
- 제조업체
- Mfr.부분 #STP100N8F6
- 패키지 TO-220-3
- 데이터시트 STP100N8F6 DataSheet
- 재고 있음6754
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사양
| Package | Tube |
| Series | STripFET™ F6 |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 80 V |
| Current-ContinuousDrain(Id)@25°C | 100A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 9mOhm @ 50A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 100 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 5955 pF @ 25 V |
| PowerDissipation(Max) | 176W (Tc) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-220 |
개요
Description
Key features of the STP100N8F6 include a maximum drain-source voltage (V_DS) of 80V, continuous drain current (I_D) of up to 100A, and a low on-resistance (R_DS(on)) of approximately 6.5 mΩ, which minimizes power loss during operation. Its fast switching speed enhances performance in dynamic applications.
The device is housed in a TO-220 package, providing effective thermal dissipation, which is crucial for maintaining reliability in high-power applications. Its robust construction makes it suitable for automotive and industrial environments.
Overall, the STP100N8F6 is an excellent choice for engineers seeking a reliable MOSFET for high-power applications requiring efficiency and performance.
Features
1. Max Drain-Source Voltage (Vds): 80V, allowing it to handle high voltage applications.
2. Continuous Drain Current (Id): 100A, suitable for heavy-load situations.
3. RDS(on): Low on-resistance of approximately 6.5 mΩ at Vgs = 10V, which minimizes power loss.
4. Gate Threshold Voltage (Vgs(th)): Typically between 2V to 4V, allowing for easy driving.
5. Fast Switching Speed: Ideal for applications that require rapid switching to improve efficiency.
6. Thermal Resistance: Good thermal performance with a TO-220 package, enhancing heat dissipation.
7. Applications: Commonly used in power management, motor drivers, and DC-DC converters.
Overall, the STP100N8F6 is suitable for power electronics requiring high current and efficient performance.
Package
Pinout
1. Gate (G): This pin receives the control voltage, allowing the MOSFET to turn on or off.
2. Drain (D): The drain pin is where the main current flows out of the device when it is in the 'on' state.
3. Source (S): This pin is connected to the ground or the lower potential side of the circuit.
The STP100N8F6 is designed for high-performance applications, with a maximum continuous drain current of 100A and a maximum drain-source voltage of 80V. It is suitable for power management, motor control, and other applications requiring efficient switching.
Manufacturer
Application
Equivalent
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