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STP11NM80
MOSFET N-CH 800V 11A TO220AB
- 제조업체
- Mfr.부분 #STP11NM80
- 패키지
- 데이터시트 STP11NM80 DataSheet
- 재고 있음9764
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사양
| Series | MDmesh™ |
| Part Status | Active |
| Base Product Number | STP11 |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 800 V |
| Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 400mOhm @ 5.5A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 43.6 nC @ 10 V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 1630 pF @ 25 V |
| Power Dissipation (Max) | 150W (Tc) |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220 |
| Package | TO-220-3 |
| Packaging | Tube |
개요
Description
Key characteristics include fast switching speeds and the ability to handle high power, making it ideal for use in various applications such as power supplies, motor drives, and inverters. The STP11NM80 is often used in conjunction with other components in power electronics designs to improve overall system performance.
It comes in a standard TO-220 package, which facilitates easy thermal management and mounting. Overall, the STP11NM80 is a reliable choice for engineers seeking efficient and robust solutions in high-voltage electronic circuits.
Features
1. Voltage Rating: 800V, making it suitable for high-voltage applications.
2. Current Rating: 11A continuous drain current, allowing it to handle substantial loads.
3. RDS(on): Low on-state resistance (around 0.9 ohms), which reduces conduction losses and enhances efficiency.
4. Gate Threshold Voltage: Typically between 2-4V, facilitating easy driving with low gate voltage.
5. Fast Switching Speed: Suitable for high-frequency applications, improving performance in switching converters.
6. Package Type: Available in TO-220 and DPAK packages, offering flexibility in thermal management and mounting options.
7. Safe Operating Area (SOA): Ensures reliable operation under specified conditions.
These features make the STP11NM80 ideal for use in power supplies, motor control, and various switching applications.
Package
Pinout
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage to this pin turns the device on, allowing current to flow from the drain to the source.
2. Drain (D): This is the output pin where the load is connected. Current flows from the drain to the source when the MOSFET is turned on.
3. Source (S): This pin is connected to the ground or the negative side of the power supply. It serves as the return path for the current flowing through the MOSFET.
The STP11NM80 is designed for applications requiring high voltage (up to 800V) and high current (up to 11A), making it suitable for power switching applications.
Manufacturer
Application
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