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STP270N8F7
MOSFET N CH 80V 180A TO220
- 제조업체
- Mfr.부분 #STP270N8F7
- 패키지 TO-220
- 데이터시트 STP270N8F7 DataSheet
- 재고 있음6860
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사양
| Package | Tube |
| Series | DeepGATE™, STripFET™ VII |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 80 V |
| Current-ContinuousDrain(Id)@25°C | 180A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 2.5mOhm @ 90A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 193 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 13600 pF @ 50 V |
| PowerDissipation(Max) | 315W (Tc) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-220 |
개요
Description
Features
1. Voltage Rating: Rated for a maximum drain-source voltage (V_DS) of 80V, making it suitable for various power supply circuits.
2. Current Rating: Capable of handling continuous drain current (I_D) up to 270A, allowing for efficient power handling in demanding applications.
3. On-Resistance (R_DS(on)): Low on-resistance of approximately 7.5 mΩ at a gate-source voltage (V_GS) of 10V, contributing to reduced power losses and improved thermal performance.
4. Gate Threshold Voltage: Gate threshold voltage (V_GS(th)) is typically between 1.5V and 2.5V, facilitating easier drive requirements.
5. Package Type: Available in a TO-220 package, which provides good thermal management and ease of mounting.
6. Applications: Suitable for use in DC-DC converters, motor drivers, and other power switching applications.
Overall, the STP270N8F7 is designed for efficiency and high power handling in various electronic applications.
Package
Pinout
1. Gate (G): This pin controls the MOSFET's operation, allowing it to switch on and off by applying a voltage.
2. Drain (D): The current flows from the drain to the source when the MOSFET is turned on.
3. Source (S): The source pin is connected to the ground or the lower potential in the circuit.
This MOSFET is designed for high-speed switching applications and can handle high currents, making it suitable for power management and amplification in various electronic devices. Its low on-resistance and high current capability enhance efficiency in power applications.
Manufacturer
Application
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