이미지는 참조용만

STP3NK60Z

Name: STP3NK60Z
Rating: 4.7 (12 reviews)

MOSFET N-CH 600V 2.4A TO220AB

제조업체
Mfr.부분 #STP3NK60Z
패키지
데이터시트
재고 있음5477

+BOM은 RFQ는

100% 원래 &새로운

배송 준비 24 시간

365 일 보장

RFQ 및더 많은 할인

사양

Supplier	STMicroelectronics
Package	Tube
Series	SuperMESH™
ProductStatus	Not For New Designs
FETType	N-Channel
Technology	MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)	600 V
Current-ContinuousDrain(Id)@25°C	2.4A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn)	10V
RdsOn(Max)@IdVgs	3.6Ohm @ 1.2A, 10V
Vgs(th)(Max)@Id	4.5V @ 50µA
GateCharge(Qg)(Max)@Vgs	11.8 nC @ 10 V
Vgs(Max)	±30V
InputCapacitance(Ciss)(Max)@Vds	311 pF @ 25 V
PowerDissipation(Max)	45W (Tc)
OperatingTemperature	-55°C ~ 150°C (TJ)
MountingType	Through Hole
SupplierDevicePackage	TO-220

개요

Description

STP3NK60Z is STMicroelectronics’ N-channel enhancement-mode power MOSFET rated for 600 V blocking, typically used as a high-voltage switch in power electronics. It’s packaged in TO-220AB and intended for applications like offline switch-mode power supplies, PFC stages, DC-DC converters, and motor drives.
Key points:
- Gate drive: not a logic-level device. Gate threshold ~2–4 V, but you usually need about 10 V (Vgs) for full conduction; Vgs max ±20 V.
- Voltage/current: Vds = 600 V; Id is a few amperes with proper heatsinking; Rds(on) is specified in the datasheet and will be higher at lower gate voltages.
- Switching: designed for fast switching with adequate avalanche energy rating; ensure proper gate drive, damping, and thermal management.
- Design notes: provide heatsinking, gate resistor, and protection; verify Safe Operating Area for your operating conditions.
For exact Id, Rds(on), and thermal limits, consult the STP3NK60Z datasheet.

Features

STP3NK60Z is an N-channel enhancement-mode power MOSFET. Key features:
- VDS: 600 V
- IDS: 3 A continuous
- RDS(on): typically a few ohms (approx. 1.5–2.5 Ω range at VGS ≈ 10 V)
- Gate drive: 2–4 V threshold; driving needs around 10 V for lowest RDS(on)
- Fast switching with trench technology; low gate charge
- Avalanche rugged with solid SOA; integral body diode
- Packages: through-hole TO-220AB and surface-mount D²PAK variants
- RoHS-compliant; suitable for high-voltage switching in SMPS, inverters, and motor drives.

Package

STP3NK60Z is a N-channel MOSFET in a TO-220AB (through-hole) plastic package.

Pinout

- Pin count: 3 leads (Gate, Drain, Source) plus a drain tab.
- Pinout (typical TO-220/D²PAK): Pin 1 Gate, Pin 2 Drain, Pin 3 Source; the tab is Drain.
- Function: N-channel enhancement-mode power MOSFET (high-voltage switch, ~600 V class; used for switching in power supplies, motor drivers, etc.).

Manufacturer

STMicroelectronics (ST) is the manufacturer of the STP3NK60Z. It is a multinational semiconductor company (global electronics/semiconductors maker) headquartered in Geneva, Switzerland, and one of the world’s largest producers of integrated circuits, discrete devices, MEMS, and sensors.

Application

STP3NK60Z is a high-voltage, medium-current N-channel MOSFET. Typical applications include:
- Offline SMPS and AC-DC adapters
- High-voltage DC-DC converter stages
- Motor control and inverter power stages
- Solar inverters and PV charge controllers
- Battery chargers and UPS/power-supply front ends
- Industrial and consumer electronic power-switching applications