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STP4N150
MOSFET N-CH 1500V 4A TO220AB
- 제조업체
- Mfr.부분 #STP4N150
- 패키지 TO-220-3
- 데이터시트 STP4N150 DataSheet
- 재고 있음5865
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사양
| Package | Tube |
| Series | PowerMESH™ |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 1500 V |
| Current-ContinuousDrain(Id)@25°C | 4A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 7Ohm @ 2A, 10V |
| Vgs(th)(Max)@Id | 5V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 50 nC @ 10 V |
| Vgs(Max) | ±30V |
| InputCapacitance(Ciss)(Max)@Vds | 1300 pF @ 25 V |
| PowerDissipation(Max) | 160W (Tc) |
| OperatingTemperature | 150°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-220 |
개요
Description
The STP4N150 features low on-resistance, allowing efficient performance with minimal heat generation, which is crucial for enhancing the reliability of electronic systems. Its package design, often in TO-220 or similar configurations, facilitates effective heat dissipation.
Due to its robust specifications, the STP4N150 is commonly used in applications such as industrial drives, automotive electronics, and consumer electronics. When selecting this transistor, it is essential to consider thermal management and ensure that it operates within safe limits to prevent damage.
Features
1. Voltage Rating: Maximum drain-source voltage (V_DS) of 150V, allowing it to handle high-voltage applications.
2. Current Rating: Continuous drain current (I_D) of up to 4A, suitable for medium power needs.
3. R_DS(on): Low on-resistance (approximately 0.8Ω), which minimizes conduction losses and improves efficiency.
4. Gate Threshold Voltage (V_GS(th)): Typically ranges from 2V to 4V, allowing for easy drive with standard logic levels.
5. Fast Switching: Designed for high-speed operation, making it ideal for switching applications.
6. Package Type: Available in TO-220 and other packages for versatile mounting options.
7. Thermal Resistance: Low thermal resistance ensures effective heat dissipation.
These features make the STP4N150 suitable for power supply circuits, motor drivers, and other high-voltage applications.
Package
Pinout
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage between the gate and the source turns the device on, allowing current to flow from the drain to the source.
2. Drain (D): This is the terminal through which the load current flows when the MOSFET is in the on state.
3. Source (S): This pin is connected to the ground or the negative side of the power supply in low-side switching configurations.
The STP4N150 is designed to handle high voltage and current applications, with a maximum V_DS of 150V and a continuous drain current (I_D) of 4A. It is commonly used in power switching applications, such as in power supplies and motor control circuits.
Manufacturer
Application
1. Power Supplies: For switching and regulation.
2. Motor Control: In driving various types of motors.
3. Industrial Equipment: In automation and control systems.
4. Lighting Systems: For LED and other lighting applications.
5. Consumer Electronics: In power management circuits.
Its high voltage and current capabilities make it suitable for these diverse applications.
Equivalent
1. IRF150
2. MTP4N150E
3. SI9872BDY
4. FQP4N150
Always check specific datasheets for electrical characteristics to ensure compatibility.
배송
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배송 요금 참조 (DHL/FedEx):
DHL은: 배송 비용은 $25-$45 (0.5kg)에서 2-5 영업일의 추정적 배달 시간이 있습니다.
FedEx는: 배송 비용은 $25-$40 (0.5kg)에서 3-7 영업일의 추정적 배달 시간을 가지고 있습니다.
UPS는: 배송 비용은 $25-$45 (0.5kg)에서 3-7 영업일의 추정적 배달 시간을 가지고 있습니다.
TNT는: 배송 비용은 $25-$65 (0.5kg)에서 3-7 영업일의 추정적 배달 시간을 가지고 있습니다.
EMS는: 배송 비용은 $30-$50 (0.5kg)에서 7-15 영업일의 추정적 배달 시간을 제공합니다.
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