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STP6N120K3
MOSFET N-CH 1200V 6A TO220
- 제조업체
- Mfr.부분 #STP6N120K3
- 패키지
- 데이터시트 STP6N120K3 DataSheet
- 재고 있음4693
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사양
| Package | Tube |
| Series | SuperMESH3™ |
| ProductStatus | Obsolete |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 1200 V |
| Current-ContinuousDrain(Id)@25°C | 6A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 2.4Ohm @ 2.5A, 10V |
| Vgs(th)(Max)@Id | 5V @ 100µA |
| GateCharge(Qg)(Max)@Vgs | 34 nC @ 10 V |
| Vgs(Max) | ±30V |
| InputCapacitance(Ciss)(Max)@Vds | 1050 pF @ 100 V |
| PowerDissipation(Max) | 150W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-220 |
개요
Description
Key specifications include a low on-resistance (R_DS(on)) to minimize power losses during operation, a fast switching speed, and a robust thermal performance. Additionally, the STP6N120K3 comes in a TO-220 package, which facilitates effective heat dissipation.
Its gate threshold voltage (V_GS(th)) is designed to be compatible with standard drive circuits, allowing for easy integration into various electronic designs. Overall, the STP6N120K3 is a reliable choice for engineers seeking efficient power management solutions in demanding environments.
Features
- Voltage Rating: It has a maximum drain-source voltage (Vds) of 120V.
- Current Rating: The MOSFET can handle continuous drain currents up to 6A.
- RDS(on): Low on-resistance (typically around 0.5 Ω), reducing power loss and improving efficiency.
- Gate Threshold Voltage: Vgs(th) typically ranges between 2V to 4V, allowing for easy drive with standard logic levels.
- Package Type: Available in TO-220 and other packages for effective heat dissipation.
- Fast Switching Speed: Suitable for applications requiring rapid switching capabilities.
- Applications: Commonly used in power supplies, motor drives, and automotive applications due to its robustness.
Overall, the STP6N120K3 is ideal for applications needing reliable performance in high-voltage environments.
Package
Pinout
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate allows current to flow between the drain and source.
2. Drain (D): This is the terminal through which the current enters the MOSFET. It is connected to the load.
3. Source (S): This terminal is where the current exits the MOSFET and is connected to ground or the return path of the circuit.
The STP6N120K3 is designed for high-voltage applications, rated for a maximum drain-source voltage (V_DS) of 120V and a continuous drain current (I_D) of 6A, making it suitable for power management and switching applications.
Manufacturer
Application
Equivalent
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