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STP8N120K5
MOSFET N-CH 1200V 6A TO220
- 제조업체
- Mfr.부분 #STP8N120K5
- 패키지
- 데이터시트 STP8N120K5 DataSheet
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사양
| Supplier | STMicroelectronics |
| Package | Tube |
| Series | MDmesh™ K5 |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 1200 V |
| Current-ContinuousDrain(Id)@25°C | 6A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 2Ohm @ 2.5A, 10V |
| Vgs(th)(Max)@Id | 5V @ 100µA |
| GateCharge(Qg)(Max)@Vgs | 13.7 nC @ 10 V |
| InputCapacitance(Ciss)(Max)@Vds | 505 pF @ 100 V |
| PowerDissipation(Max) | 130W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-220 |
개요
Description
Key features include low on-resistance (R_DS(on)), which improves efficiency by reducing power losses during operation, and a fast switching speed, enabling effective control in fast-switching applications. The device is housed in a TO-220 package, which ensures good thermal performance and ease of mounting to heat sinks.
The STP8N120K5 is commonly used in applications that require high efficiency and reliability, making it a popular choice among engineers in the field of electronics and power management. It is essential to consult the datasheet for detailed specifications and recommended operating conditions.
Features
1. Voltage Rating: It can handle a maximum drain-source voltage (VDS) of 120V, making it suitable for high-voltage applications.
2. Continuous Drain Current: The device supports a continuous drain current (ID) of up to 8A, allowing it to manage significant loads.
3. On-Resistance: It has a low on-resistance (RDS(on)) of approximately 0.5 ohms, which minimizes power losses during operation.
4. Gate Threshold Voltage: The gate threshold voltage ranges from 2V to 4V, ensuring it can be driven easily with standard logic levels.
5. Package Type: Available in a TO-220 package, it provides good thermal performance, facilitating heat dissipation.
6. Applications: Ideal for power management, switch-mode power supplies, and motor control.
Overall, the STP8N120K5 is valued for its efficiency, reliability, and versatility in various electronic circuits.
Package
Pinout
1. Gate (G): This pin controls the MOSFET's switching. Applying a voltage to the gate allows current to flow from the drain to the source.
2. Drain (D): This pin is where the load is connected. Current flows from the drain to the source when the MOSFET is turned on.
3. Source (S): This pin is connected to the ground or lower potential in the circuit. Current exits through this pin when the device is conducting.
The STP8N120K5 is designed for high-voltage applications, rated for 1200V and can handle a continuous drain current of up to 8A under specified conditions.
Manufacturer
Application
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