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STP8NK80ZFP
MOSFET N-CH 800V 6.2A TO220FP
- 제조업체
- Mfr.부분 #STP8NK80ZFP
- 패키지 TO-220FP
- 데이터시트 STP8NK80ZFP DataSheet
- 재고 있음6236
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사양
| Package | Tube |
| Series | SuperMESH™ |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 800 V |
| Current-ContinuousDrain(Id)@25°C | 6.2A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 1.5Ohm @ 3.1A, 10V |
| Vgs(th)(Max)@Id | 4.5V @ 100µA |
| GateCharge(Qg)(Max)@Vgs | 46 nC @ 10 V |
| Vgs(Max) | ±30V |
| InputCapacitance(Ciss)(Max)@Vds | 1320 pF @ 25 V |
| PowerDissipation(Max) | 30W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-220FP |
개요
Description
Key features include low on-resistance (RDS(on)), which enhances efficiency by minimizing power losses during operation, and fast switching speeds, making it ideal for high-frequency applications. The package type is typically TO-220, which allows for good thermal performance and easy heat dissipation.
Its robust construction and high-temperature capabilities make the STP8NK80ZFP reliable in demanding environments. Overall, this MOSFET is widely used in the electronics industry for applications that require reliable performance in high-voltage environments.
Features
1. Voltage Rating: Operates at a maximum drain-source voltage (Vds) of 800V, suitable for high-voltage applications.
2. Current Rating: Capable of handling continuous drain current (Id) up to 8A, making it suitable for various power conversion applications.
3. On-Resistance: Low Rds(on) of around 0.9Ω, which helps reduce power losses and improve efficiency during operation.
4. Gate Threshold Voltage: Vgs(th) ranges from 2V to 4V, allowing for effective control in different circuit designs.
5. Fast Switching: Designed for fast switching speeds, enhancing efficiency in power supply circuits.
6. Packages: Available in a TO-220 package, facilitating easy heat dissipation and integration into electronic designs.
Overall, the STP8NK80ZFP is ideal for use in switch-mode power supplies, motor drivers, and other applications requiring high voltage and efficiency.
Package
Pinout
1. Gate (G): Controls the MOSFET operation; applying a voltage here allows current to flow between the drain and source.
2. Drain (D): The terminal through which the current exits the MOSFET when it is in the 'on' state.
3. Source (S): The terminal from which the current enters the MOSFET; typically connected to ground in switching applications.
4. Body Diode: Internal to the MOSFET, it provides a pathway for current in the reverse direction when the MOSFET is off.
5. Tab/Heatsink: Used for thermal management; connects to the source.
The STP8NK80ZFP is designed for high-voltage applications, with a maximum drain-source voltage (V_DS) of 800V and can handle continuous drain currents up to 8A, making it suitable for power switching applications.
Manufacturer
Application
Equivalent
1. IRF840
2. FQP80N80
3. MTP8N80E
4. STP8NK80Z
5. BTA16-800V
Always verify specifications such as voltage, current ratings, and RDS(on) before substitution.
배송
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배송 요금 참조 (DHL/FedEx):
DHL은: 배송 비용은 $25-$45 (0.5kg)에서 2-5 영업일의 추정적 배달 시간이 있습니다.
FedEx는: 배송 비용은 $25-$40 (0.5kg)에서 3-7 영업일의 추정적 배달 시간을 가지고 있습니다.
UPS는: 배송 비용은 $25-$45 (0.5kg)에서 3-7 영업일의 추정적 배달 시간을 가지고 있습니다.
TNT는: 배송 비용은 $25-$65 (0.5kg)에서 3-7 영업일의 추정적 배달 시간을 가지고 있습니다.
EMS는: 배송 비용은 $30-$50 (0.5kg)에서 7-15 영업일의 추정적 배달 시간을 제공합니다.
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