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STS4DNF60L
MOSFET 2N-CH 60V 4A 8-SOIC
- 제조업체
- Mfr.부분 #STS4DNF60L
- 패키지 SO-8
- 데이터시트 STS4DNF60L DataSheet
- 재고 있음7849
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사양
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | STripFET™ |
| ProductStatus | Active |
| FETType | 2 N-Channel (Dual) |
| FETFeature | Logic Level Gate |
| DraintoSourceVoltage(Vdss) | 60V |
| Current-ContinuousDrain(Id)@25°C | 4A |
| RdsOn(Max)@IdVgs | 55mOhm @ 2A, 10V |
| Vgs(th)(Max)@Id | 2.5V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 15nC @ 4.5V |
| InputCapacitance(Ciss)(Max)@Vds | 1030pF @ 25V |
| Power-Max | 2W |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | 8-SOIC (0.154, 3.90mm Width) |
개요
Description
The device typically includes a gate-source threshold voltage that allows for optimal switching performance, making it appealing for applications where efficiency is critical.
Due to its compact size and robust design, the STS4DNF60L is often utilized in consumer electronics, automotive systems, and renewable energy applications. The package type, usually a TO-220 or similar, facilitates effective heat dissipation, further enhancing its reliability and performance in demanding environments.
Overall, the STS4DNF60L is a versatile component that meets the needs of modern power electronics.
Features
1. Voltage Rating: It supports a maximum drain-source voltage of 600V, making it suitable for high-voltage applications.
2. Current Rating: Capable of handling continuous drain current up to 4A, it is effective for various power management tasks.
3. Low RDS(on): The device offers a low on-resistance (typically around 0.55 ohms at 10V), which enhances efficiency and reduces heat generation during operation.
4. Gate Threshold Voltage: With a gate threshold voltage ranging from 2V to 4V, it enables reliable switching with lower drive voltage requirements.
5. Fast Switching Speed: Its design allows for rapid switching, ideal for high-frequency applications.
6. Package Type: Available in a TO-220 package, it facilitates easy heat dissipation and mounting.
These features make the STS4DNF60L suitable for applications in power supplies, motor drivers, and other electronic circuits requiring efficient switching performance.
Package
Pinout
1. Gate (G) - Controls the MOSFET operation, turning it on or off.
2. Drain (D) - The terminal through which current flows out of the MOSFET when it is on.
3. Source (S) - The terminal through which current flows into the device.
The fourth pin is typically a tab or heat sink connection, serving as a thermal management point. The STS4DNF60L is designed for high-voltage applications, with a maximum drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) of 4A at a specified temperature. It is commonly used in power conversion and switching applications due to its low on-resistance and efficient operation.
Manufacturer
Application
Equivalent
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