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STW31N65M5
MOSFET N-CH 650V 22A TO247
- 제조업체
- Mfr.부분 #STW31N65M5
- 패키지 TO-247
- 데이터시트 STW31N65M5 DataSheet
- 재고 있음6234
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사양
| Package | Tube |
| Series | MDmesh™ V |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 650 V |
| Current-ContinuousDrain(Id)@25°C | 22A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 148mOhm @ 11A, 10V |
| Vgs(th)(Max)@Id | 5V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 45 nC @ 10 V |
| Vgs(Max) | ±25V |
| InputCapacitance(Ciss)(Max)@Vds | 816 pF @ 100 V |
| PowerDissipation(Max) | 150W (Tc) |
| OperatingTemperature | 150°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-247-3 |
개요
Description
With a low on-resistance (R_DS(on)) of 0.31Ω, it provides efficient conduction, minimizing power losses during operation. The device can handle continuous drain currents up to 31A, allowing for effective performance in high-power applications.
Additionally, the STW31N65M5 is housed in a TO-220 package, facilitating easy heat dissipation and mounting. It is characterized by fast switching capabilities, which are essential for high-frequency applications.
Overall, the STW31N65M5 is an ideal choice for engineers seeking reliability and efficiency in high-voltage power electronics.
Features
1. Voltage Rating: Maximum drain-source voltage (V_DS) of 650V.
2. Current Rating: Continuous drain current (I_D) of 31A, making it suitable for high-current applications.
3. R_DS(on): Low on-resistance (R_DS(on)) of about 0.45Ω (at V_GS = 10V), which enhances efficiency and reduces heat generation.
4. Gate Threshold Voltage: Suitable for logic-level operations with a gate threshold voltage (V_GS(th)) ranging from 2V to 4V.
5. Fast Switching: Optimized for fast switching applications, contributing to improved performance in power converters.
6. Thermal Performance: High maximum junction temperature (T_J) of 150°C, allowing for robust thermal management.
7. Package: Available in a TO-220 package, facilitating easy heat dissipation.
These features make the STW31N65M5 ideal for use in switch-mode power supplies, motor drivers, and other high-voltage applications.
Package
Pinout
1. Gate (G): This pin controls the MOSFET, allowing it to turn on or off based on the voltage applied.
2. Drain (D): The drain pin is where the load is connected, and the current flows out of this terminal when the MOSFET is turned on.
3. Source (S): The source pin is typically connected to ground or the negative side of the power supply, allowing current to flow into the drain from the source when activated.
4. Body Diode: Internally integrated, it provides path for reverse current and improves reliability in certain applications, though it is typically considered a part of the structure rather than a separate pin.
The STW31N65M5 is designed for applications requiring high voltage (650V) and high current (31A), making it suitable for switch-mode power supplies and other high-power applications.
Manufacturer
Application
Equivalent
1. IRF840 - 500V, 8A
2. FQP30N60 - 600V, 30A
3. MTP50N60E - 600V, 50A
4. STP65NF75 - 750V, 65A
Always check the specific datasheets for detailed specifications to ensure suitability for your application.
배송
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배송 요금 참조 (DHL/FedEx):
DHL은: 배송 비용은 $25-$45 (0.5kg)에서 2-5 영업일의 추정적 배달 시간이 있습니다.
FedEx는: 배송 비용은 $25-$40 (0.5kg)에서 3-7 영업일의 추정적 배달 시간을 가지고 있습니다.
UPS는: 배송 비용은 $25-$45 (0.5kg)에서 3-7 영업일의 추정적 배달 시간을 가지고 있습니다.
TNT는: 배송 비용은 $25-$65 (0.5kg)에서 3-7 영업일의 추정적 배달 시간을 가지고 있습니다.
EMS는: 배송 비용은 $30-$50 (0.5kg)에서 7-15 영업일의 추정적 배달 시간을 제공합니다.
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