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STW40N60M2
MOSFET N-CH 600V 34A TO247
- 제조업체
- Mfr.부분 #STW40N60M2
- 패키지 TO-247
- 데이터시트 STW40N60M2 DataSheet
- 재고 있음2673
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사양
| Package | Tube |
| Series | MDmesh™ II Plus |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 600 V |
| Current-ContinuousDrain(Id)@25°C | 34A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 88mOhm @ 17A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 57 nC @ 10 V |
| Vgs(Max) | ±25V |
| InputCapacitance(Ciss)(Max)@Vds | 2500 pF @ 100 V |
| PowerDissipation(Max) | 250W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-247-3 |
개요
Description
Key features include a low gate charge, which enables fast switching speeds, making it ideal for high-frequency applications. The device also offers enhanced avalanche rating and improved thermal stability, which contribute to its reliability in demanding environments.
The STW40N60M2 is packaged in a TO-247 or DPAK format, allowing for easy integration into various circuit designs. Overall, it is a versatile component for engineers looking for efficient and reliable power management solutions.
Features
Key features include:
- Fast Switching: Suitable for high-speed applications, enhancing performance in switching power supplies and converters.
- Thermal Resistance: Equipped with a low thermal resistance, facilitating effective heat dissipation.
- Gate Threshold Voltage: A gate threshold voltage (V_GS(th)) of 2-4V allows for easier drive with lower gate voltages.
- Robustness: Designed with avalanche capability, providing added protection in transient conditions.
- TO-220 Package: Offers good thermal management and ease of mounting.
Overall, the STW40N60M2 is ideal for power conversion systems, motor drives, and industrial applications requiring high efficiency and reliability.
Package
Pinout
Pin Count and Functions:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate allows the device to switch on and off, controlling the flow of current between the drain and source.
2. Drain (D): The drain pin is where the current flows out of the MOSFET when it is in the on state. It connects to the load.
3. Source (S): This pin is connected to the ground or the negative side of the power supply. It serves as the return path for the current when the MOSFET is conducting.
4. Substrate (B): This is typically internally connected to the source and is used for device stability and protection.
The STW40N60M2 is rated for 600V and can handle a continuous drain current of up to 40A, making it suitable for various high-power applications.
Manufacturer
Application
Equivalent
1. IRFHC40 - International Rectifier
2. MTP40N60E - ON Semiconductor
3. FQP40N60 - Fairchild Semiconductor
4. NTP40N60 - Nexperia
Always verify specifications and performance characteristics before substitution.
배송
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배송 요금 참조 (DHL/FedEx):
DHL은: 배송 비용은 $25-$45 (0.5kg)에서 2-5 영업일의 추정적 배달 시간이 있습니다.
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UPS는: 배송 비용은 $25-$45 (0.5kg)에서 3-7 영업일의 추정적 배달 시간을 가지고 있습니다.
TNT는: 배송 비용은 $25-$65 (0.5kg)에서 3-7 영업일의 추정적 배달 시간을 가지고 있습니다.
EMS는: 배송 비용은 $30-$50 (0.5kg)에서 7-15 영업일의 추정적 배달 시간을 제공합니다.
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