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STW48N60DM2
MOSFET N-CH 600V 40A TO247
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- Mfr.부분 #STW48N60DM2
- 패키지
- 데이터시트
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사양
| Series | MDmesh™ DM2 |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600 V |
| Current - Continuous Drain (Id) @ 25°C | 40A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 79mOhm @ 20A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 70 nC @ 10 V |
| Vgs (Max) | ±25V |
| Input Capacitance (Ciss) (Max) @ Vds | 3250 pF @ 100 V |
| Power Dissipation (Max) | 300W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247-3 |
| Package / Case | TO-247-3 |
| Base Product Number | STW48 |
개요
Description
Key characteristics of the STW48N60DM2 include a low gate charge and low output capacitance, which help achieve reduced switching losses, leading to higher efficiency in power conversion systems. It is commonly used in applications such as power supplies, converters, motor drivers, and other high-power electronic systems.
The package type for this MOSFET is TO-247, offering high thermal performance and reliability in demanding environments. Overall, the STW48N60DM2 is a robust solution for engineers looking for a balance of high performance and efficiency in their power management designs.
Features
1. Voltage Rating: It has a drain-source breakdown voltage (V_DS) of 600V, making it suitable for medium to high-voltage applications.
2. Current Rating: The continuous drain current (I_D) is 48A, allowing it to handle a substantial amount of current.
3. Low On-State Resistance: It features a low R_DS(on), which translates to lower conduction losses and increased efficiency in power conversion applications.
4. Fast Switching: Optimized for fast switching, which is important for applications requiring high efficiency and reduced electromagnetic interference (EMI).
5. Reduced Gate Charge: The device has a low gate charge, enabling efficient drive and reduced power losses in the gate drive circuit.
6. Applications: Commonly used in power supplies, converters, and motor control, especially where high efficiency and reliability are critical.
7. Package: It typically comes in a TO-247 package, which aids in heat dissipation and can be mounted easily.
These features make the STW48N60DM2 ideal for a variety of power management applications, particularly where efficiency and thermal performance are important.
Package
Pinout
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage to the gate controls the flow of current between the drain and source.
2. Drain (D): This pin is the terminal through which the main current flows when the MOSFET is on. The drain is connected to the load in most applications.
3. Source (S): This pin is connected to the ground or return path of the circuit. The source is where the current enters the MOSFET.
The STW48N60DM2 is a part of the MDmesh DM2 series, featuring low on-resistance and high switching speed, making it suitable for various high-efficiency applications.
Manufacturer
Application
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