이미지는 참조용만

STW48N60M2

Name: STW48N60M2
Rating: 4.7 (12 reviews)

MOSFET N-CH 600V 42A TO247

제조업체
Mfr.부분 #STW48N60M2
패키지 TO-247
데이터시트 STW48N60M2 DataSheet
재고 있음4480

+BOM은 RFQ는

100% 원래 &새로운

배송 준비 24 시간

365 일 보장

RFQ 및더 많은 할인

사양

Package	Tube
Series	MDmesh™ M2
ProductStatus	Active
FETType	N-Channel
Technology	MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)	600 V
Current-ContinuousDrain(Id)@25°C	42A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn)	10V
RdsOn(Max)@IdVgs	70mOhm @ 21A, 10V
Vgs(th)(Max)@Id	4V @ 250µA
GateCharge(Qg)(Max)@Vgs	70 nC @ 10 V
Vgs(Max)	±25V
InputCapacitance(Ciss)(Max)@Vds	3060 pF @ 100 V
PowerDissipation(Max)	300W (Tc)
OperatingTemperature	-55°C ~ 150°C (TJ)
MountingType	Through Hole
SupplierDevicePackage	TO-247-3

개요

Description

The STW48N60M2 is a high-voltage N-channel MOSFET designed for power applications, featuring a maximum drain-source voltage (VDS) of 600V and a continuous drain current (ID) of 48A. It is part of STMicroelectronics' M2 series, known for its low on-resistance (RDS(on)) and fast switching capabilities, making it suitable for various applications such as power supplies, motor drives, and automotive systems.
Key specifications include an RDS(on) of approximately 0.075 ohms, a gate threshold voltage (VGS(th)) between 2V and 4V, and a maximum power dissipation of around 94W. The device is housed in a TO-220 package, which facilitates effective heat dissipation.
The STW48N60M2 is well-suited for applications that require efficient power management and reliable performance in high-voltage environments, benefiting from its robustness and thermal performance. It is commonly used in circuits involving switch-mode power supplies (SMPS) and inverters.

Features

The STW48N60M2 is a high-voltage N-channel MOSFET designed for various power applications. Key features include:
- Voltage Rating: 600V maximum drain-source voltage (Vds).
- Current Rating: Continuous drain current (Id) of up to 48A at a temperature of 25°C.
- On-Resistance: Low Rds(on) of about 0.14Ω at Vgs = 10V, enabling efficient conduction.
- Gate Threshold Voltage: Vgs(th) typically between 2V and 4V, allowing for effective gate control.
- Power Dissipation: Maximum power dissipation of 150W, with thermal resistance (junction-to-case) of 0.5°C/W.
- Fast Switching: Suitable for high-frequency applications due to low gate charge (Qg).
- Package Type: Available in an TO-220 package, providing efficient heat dissipation and easy mounting.
These features make the STW48N60M2 ideal for use in switch-mode power supplies, motor drives, and other high-voltage applications.

Package

The STW48N60M2 is packaged in a TO-247 format. This type of package is designed for high-power applications, allowing for efficient heat dissipation and robust performance in power electronics.

Pinout

The STW48N60M2 is a N-channel MOSFET designed for high-voltage applications. It has a total of 6 pins. The pin configuration is as follows:
1. Gate (G) - Controls the MOSFET's switching on and off.
2. Drain (D) - The terminal through which the main current flows when the MOSFET is on.
3. Source (S) - The terminal that connects to the ground or negative side of the power supply.
The other three pins are typically used for thermal and mechanical mounting purposes rather than electrical function.
Key specifications of the device include a maximum drain-source voltage (V_DS) of 600V, a continuous drain current (I_D) rating of 48A, and low on-resistance (R_DS(on)), making it suitable for applications such as power supplies, motor drives, and lighting control.

Manufacturer

The STW48N60M2 is manufactured by STMicroelectronics, a global semiconductor company. STMicroelectronics specializes in the design and production of a wide range of electronic components, including analog and digital integrated circuits, microcontrollers, and power management devices. Founded in 1987 and headquartered in Geneva, Switzerland, the company serves various industries, including automotive, industrial, consumer electronics, and telecommunications. STMicroelectronics is known for its innovations in power semiconductors and is a key player in the development of energy-efficient solutions. The STW48N60M2 is a high-voltage MOSFET optimized for power applications, reflecting the company's commitment to advancing technology in energy efficiency and reliability.

Application

The STW48N60M2 is a high-voltage N-channel MOSFET primarily used in power supply applications, including switch-mode power supplies (SMPS), motor drives, and inverters. Its features make it suitable for automotive applications, industrial automation, and renewable energy systems such as solar inverters. Additionally, it is utilized in power management circuits and high-efficiency power converters due to its low on-resistance and fast switching capabilities.

Equivalent

The STW48N60M2 is a 600V N-channel MOSFET. Equivalent products include:
1. IRF840 (500V, higher RDS(on))
2. MTP50N60E (600V, similar specs)
3. FQD50N60 (600V, higher RDS(on))
4. BTA60N60V (600V, similar applications)
Always verify the datasheets for specific parameters like RDS(on), VGS, and package type for compatibility in your application.