이미지는 참조용만

STW48N60M6

Name: STW48N60M6
Rating: 4.7 (12 reviews)

MOSFET N-CH 600V 39A TO247

제조업체
Mfr.부분 #STW48N60M6
패키지
데이터시트 STW48N60M6 DataSheet
재고 있음21616

+BOM은 RFQ는

100% 원래 &새로운

배송 준비 24 시간

365 일 보장

RFQ 및더 많은 할인

사양

Supplier	STMicroelectronics
Package	Tube
Series	MDmesh™ M6
ProductStatus	Active
FETType	N-Channel
Technology	MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)	600 V
Current-ContinuousDrain(Id)@25°C	39A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn)	10V
RdsOn(Max)@IdVgs	69mOhm @ 19.5A, 10V
Vgs(th)(Max)@Id	4.75V @ 250µA
GateCharge(Qg)(Max)@Vgs	57 nC @ 10 V
Vgs(Max)	±25V
InputCapacitance(Ciss)(Max)@Vds	2578 pF @ 100 V
PowerDissipation(Max)	250W (Tc)
OperatingTemperature	-55°C ~ 150°C (TJ)
MountingType	Through Hole
SupplierDevicePackage	TO-247-3

개요

Description

The STW48N60M6 is a high-voltage N-channel MOSFET designed for efficient power management applications. It features a maximum drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) of 48A, making it suitable for use in switch-mode power supplies, inverters, and motor control applications. The device is known for its low on-resistance (R_DS(on)), which minimizes conduction losses, and a fast switching speed, enhancing overall efficiency.
Key features include a maximum gate-source voltage (V_GS) rating of ±20V, a thermal resistance junction-to-case (R_THJC) of 0.5 °C/W, and a high avalanche capability. The STW48N60M6 is packaged in a TO-220 form factor, allowing for effective heat dissipation during operation.
Designed for high-performance applications, it supports various industrial and consumer electronics, ensuring reliability and stability in demanding environments. Its robust characteristics make it a popular choice among engineers for developing efficient electronic circuits.

Features

The STW48N60M6 is a high-voltage N-channel MOSFET designed for various power applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 600V, making it suitable for high-voltage operations.
2. Current Rating: The device can handle continuous drain current (I_D) of up to 48A, which is beneficial for power management.
3. R_DS(on): It features a low on-resistance (R_DS(on)) of approximately 0.060 ohms, ensuring efficient conduction and reduced power loss.
4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is in the range of 2-4V, allowing for easy driving with standard gate voltages.
5. Fast Switching: The MOSFET supports fast switching speeds, making it ideal for applications in switching power supplies, motor drivers, and inverters.
6. Package Type: Typically available in a TO-220 package, facilitating heat dissipation and ease of mounting.
These features make the STW48N60M6 suitable for use in various electronic circuits requiring reliable high-voltage switching.

Package

The STW48N60M6 is packaged in a TO-247 package type. This package is designed for high-power applications, providing good thermal performance and ease of mounting.

Pinout

The STW48N60M6 is a high-voltage MOSFET from STMicroelectronics with a pin count of 3. The pin configuration and their functions are as follows:
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage to this pin turns the device on or off.
2. Drain (D): This pin is where the load is connected. The current flows from the drain to the source when the MOSFET is on.
3. Source (S): This pin is connected to the ground or the negative terminal of the power supply.
This MOSFET is designed for high voltage applications, rated for 600V with a maximum continuous current of 48A, making it suitable for use in power supplies, motor drives, and other high-power applications.

Manufacturer

The STW48N60M6 is manufactured by STMicroelectronics, a global semiconductor company. STMicroelectronics specializes in the design and production of a wide range of semiconductor products, including power management devices, microcontrollers, and sensors. The company serves various markets such as automotive, industrial, consumer electronics, and telecommunications. Established as a result of a merger between SGS Microelettronica and Thomson Semiconductors in 1987, STMicroelectronics has a strong focus on innovation and sustainability in its product offerings. The STW48N60M6 is a N-channel MOSFET designed for high-efficiency power applications, showcasing the company's commitment to providing advanced electronic components for modern technologies.

Application

The STW48N60M6 is a high-voltage MOSFET used in various applications, including power supplies, motor drives, and industrial automation systems. Its characteristics make it suitable for switch-mode power supplies (SMPS), inverters, and converters in renewable energy systems, as well as in electric vehicles and lighting control circuits. Its efficiency and thermal performance also make it ideal for high-frequency applications.

Equivalent

The STW48N60M6 is a power MOSFET with a 600V rating, 48A continuous current, and low RDS(on) characteristics. Equivalent products include:
1. IRF840 - 500V, 8A (lower voltage)
2. IRFHC40 - 400V, 40A
3. MTP50N60E - 600V, 50A
4. FQA50N60 - 600V, 50A
Always verify specifications for compatibility in your application.