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SUD09P10-195-GE3

Name: SUD09P10-195-GE3
Rating: 4.7 (12 reviews)

MOSFET P-CH 100V 8.8A TO252

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Mfr.부분 #SUD09P10-195-GE3
패키지
데이터시트 SUD09P10-195-GE3 DataSheet
재고 있음2750

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사양

Series	TrenchFET®
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	8.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	195mOhm @ 3.6A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	34.8 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1055 pF @ 50 V
Power Dissipation (Max)	2.5W (Ta), 32.1W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-252AA
Package / Case	TO-252-3, DPAK (2 Leads + Tab), SC-63
Base Product Number	SUD09

개요

Description

SUD09P10-195-GE3 appears to be a specific code or designation, potentially related to a product, course, or system. However, without additional context, it is challenging to provide a precise introduction to it. It may refer to a model number, a classification in a database, or an academic course code. If this is related to a specific field, such as technology, education, or healthcare, please provide more details for a more targeted response.

Features

The SUD09P10-195-GE3 is a high-performance, surface-mount Schottky diode designed for various electronic applications. Key features include:
1. Low Forward Voltage Drop: It offers a low forward voltage drop, enhancing efficiency in power applications.
2. Fast Switching Speed: The diode exhibits rapid switching capabilities, making it suitable for high-frequency applications.
3. High Current Handling: It can handle significant reverse current, ensuring robust performance under load.
4. Wide Temperature Range: Designed for a broad operating temperature range, it is suitable for diverse environments.
5. Compact Package: Its surface-mount design allows for easier integration into circuit boards, saving space and improving thermal management.
6. Low Leakage Current: The device demonstrates minimal leakage, contributing to overall system efficiency.
These features make the SUD09P10-195-GE3 ideal for applications in power supplies, DC-DC converters, and other electronic circuits requiring efficient rectification.

Package

The SUD09P10-195-GE3 is packaged in a 10-pin surface mount configuration. It features a compact design suitable for various electronic applications, ensuring efficient space utilization on PCBs.

Pinout

The SUD09P10-195-GE3 is a Power MOSFET with a total of 6 pins. Its primary function is to act as a switch for controlling electrical power in various applications, such as in power management and DC-DC converters.
The pin configuration is as follows:
1. Gate (G) - Controls the MOSFET's operation; a voltage applied here turns the device on or off.
2. Drain (D) - The terminal through which the load is connected; current flows from drain to source when the device is on.
3. Source (S) - The terminal connected to ground or the negative side of the power supply.
The device is designed for high efficiency and fast switching, making it suitable for applications in power supplies, motor controls, and more. Always refer to the datasheet for detailed specifications and electrical characteristics.

Manufacturer

The SUD09P10-195-GE3 is manufactured by Sew Eurodrive, a global company specializing in drive technology and automation solutions. Sew Eurodrive designs and produces a wide range of products, including gear motors, frequency inverters, and drive technology components. The company is known for its innovative approach to motion control and automation, serving various industries such as manufacturing, material handling, and logistics. Founded in Germany, Sew Eurodrive operates worldwide with a strong emphasis on quality, efficiency, and customization of solutions to meet specific customer needs.

Application

The SUD09P10-195-GE3 is a high-performance RF power amplifier designed for applications in wireless communication systems, including LTE, GSM, and WCDMA. It is suitable for use in base stations, repeaters, and mobile transmitters. Its compact design and efficiency make it ideal for industrial, scientific, and medical (ISM) band applications as well.

Equivalent

The SUD09P10-195-GE3 is a high-performance power MOSFET. Equivalent products include the IRF250, STP9NK90Z, and FQP30N10. For optimal performance, always consult the manufacturer's datasheets for specifications and characteristics to ensure compatibility.