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SUM90N10-8M2P-E3
MOSFET N-CH 100V 90A TO263
- 제조업체
- Mfr.부분 #SUM90N10-8M2P-E3
- 패키지 TO-263-3,D2PAK(2Leads+Tab),TO-263AB
- 데이터시트 SUM90N10-8M2P-E3 DataSheet
- 재고 있음3117
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배송 준비 24 시간
365 일 보장
RFQ 및더 많은 할인
사양
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | TrenchFET® |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 100 V |
| Current-ContinuousDrain(Id)@25°C | 90A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 8.2mOhm @ 20A, 10V |
| Vgs(th)(Max)@Id | 4.5V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 150 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 6290 pF @ 50 V |
| PowerDissipation(Max) | 3.75W (Ta), 300W (Tc) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | TO-263 (D²Pak) |
개요
Description
Key specifications typically include a maximum drain-source voltage (Vds) of 90V and a continuous drain current (Id) of up to 10A. The device is optimized for low on-resistance (Rds(on)), which minimizes power losses during operation. Its TO-220 package ensures good thermal performance, allowing for effective heat dissipation.
The device's fast switching capabilities make it ideal for applications like DC-DC converters, motor drivers, and power supplies. The SUM90N10-8M2P-E3 is also characterized by its reliability and robustness, making it a preferred choice in demanding environments. Overall, it provides a balance of performance, efficiency, and thermal management for various electronic applications.
Features
1. Type: N-channel MOSFET, suitable for high-speed switching.
2. Voltage Rating: Can handle a maximum drain-source voltage of 90V.
3. Current Rating: Continuous drain current of up to 10A, making it suitable for various power applications.
4. RDS(on): Low on-resistance, typically around 10 mΩ, which enhances efficiency by reducing power loss during operation.
5. Package: Available in an 8-pin TO-220 package, facilitating easy heat dissipation and mounting.
6. Switching Speed: Optimized for fast switching, ideal for use in power converters and motor control.
7. Thermal Management: Designed to operate effectively in high-temperature environments, with a maximum junction temperature of 175°C.
These features make the SUM90N10-8M2P-E3 suitable for applications in automotive, industrial control, and power management systems.
Package
Pinout
1. Gate (G): Controls the switching of the MOSFET.
2. Drain (D): The output terminal where the current flows out.
3. Source (S): The input terminal where the current enters.
4. Body (B): The intrinsic body diode, which is internally connected between the source and drain.
The MOSFET features low on-resistance and high-speed switching capabilities, making it suitable for applications in power supplies, motor drives, and other power electronic circuits. Always refer to the manufacturer's datasheet for detailed specifications and pin configuration.
Manufacturer
Application
Equivalent
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