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SVD5867NLT4G
MOSFET N-CH 60V 22A DPAK-3
- 제조업체
- Mfr.부분 #SVD5867NLT4G
- 패키지
- 데이터시트 SVD5867NLT4G DataSheet
- 재고 있음21781
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배송 준비 24 시간
365 일 보장
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사양
| Supplier | onsemi,Rochester Electronics, LLC |
| Package | Tape & Reel (TR),Cut Tape (CT),Bulk |
| ProductStatus | Not For New Designs |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 60 V |
| Current-ContinuousDrain(Id)@25°C | 22A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 4.5V, 10V |
| RdsOn(Max)@IdVgs | 39mOhm @ 11A, 10V |
| Vgs(th)(Max)@Id | 2.5V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 15 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 675 pF @ 25 V |
| PowerDissipation(Max) | 3.3W (Ta), 43W (Tc) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | DPAK-3 |
개요
Description
Key attributes often include features like short-circuit protection, thermal shutdown, and a compact package for space-constrained designs. The SVD5867NLT4G is popular in consumer electronics, automotive, and industrial applications due to its reliability and efficiency.
For precise specifications, including output voltage options, current ratings, and thermal characteristics, it's essential to consult the manufacturer's datasheet. This document provides detailed information on electrical performance, typical applications, and circuit design considerations to aid engineers in implementing the SVD5867NLT4G effectively in their projects.
Features
Key features include:
- Maximum drain-source voltage (VDS) of 25V, allowing for robust operation in moderate voltage applications.
- A continuous drain current (ID) rating of up to 60A, making it capable of handling high loads.
- Fast switching speeds, enhancing efficiency in high-frequency applications.
- A compact package (typically in TO-220 or DPAK), facilitating easy integration into circuit designs.
These features make the SVD5867NLT4G a reliable choice for engineers looking to optimize power efficiency and thermal management in their electronic designs.
Package
Pinout
1. Gate (G) - Controls the switching of the MOSFET.
2. Drain (D) - The output terminal where the load is connected.
3. Source (S) - The input terminal from which current flows into the device.
This MOSFET is typically used in power management applications, such as DC-DC converters and power switches, due to its low on-resistance and high-speed switching capabilities. The device is designed for efficient performance and reliability in various electronic circuits.
Manufacturer
Application
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