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TC58NYG0S3EBAI4

Name: TC58NYG0S3EBAI4
Rating: 4.7 (12 reviews)

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Mfr.부분 #TC58NYG0S3EBAI4
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사양

Brand	Kioxia America
Product Type	NAND Flash
Subcategory	Memory & Data Storage
Mounting Style	SMD/SMT
Interface Type	Parallel
Minimum Operating Temperature	- 40 C
Maximum Operating Temperature	+ 85 C
Supply Voltage - Min	1.7 V
Supply Voltage - Max	1.95 V
Memory Size	1 Gbit
Package / Case	TFBGA-63
Organization	128 M x 8
Packaging	Tray
Active Read Current - Max	30 mA
Supply Current - Max	30 mA
Product	NAND Flash
Factory Pack Quantity:Factory Pack Quantity	210
Moisture Sensitive	Yes
Shipping Restrictions	Mouser does not presently sell this product in your region.
Data Bus Width	8 bit
Speed	25 ns
Timing Type	Synchronous
Architecture	Block Erase
Memory Type	NAND

개요

Description

TC58NYG0S3EBAI4 refers to a specific model of NAND flash memory manufactured by Toshiba. It typically represents a type of 3D NAND flash technology, which is designed for high storage capacity, improved performance, and enhanced endurance compared to traditional 2D NAND. This type of memory is commonly used in various applications, including solid-state drives (SSDs), smartphones, tablets, and other consumer electronics.
The key features often include higher data transfer speeds, lower power consumption, and greater reliability over a longer lifespan. The TC58 series aims to meet the increasing demands for storage in data-intensive environments, such as data centers and cloud computing.
To fully understand this specific model, one would refer to technical datasheets or product specifications provided by Toshiba or other relevant industry resources. These documents would detail the architecture, performance metrics, and intended applications of TC58NYG0S3EBAI4.

Features

The TC58NYG0S3EBAI4 is a NAND flash memory device produced by Toshiba. Key features include:
1. Storage Capacity: Typically, it offers a capacity of 64GB.
2. Interface: It utilizes the Serial Interface (SPI) for communication, ensuring compatibility with various embedded systems.
3. NAND Type: It is a 3D NAND flash, providing improved performance and endurance compared to traditional planar NAND.
4. Endurance: High endurance levels support a substantial number of program/erase cycles, making it suitable for applications requiring reliability.
5. Low Power Consumption: Designed for efficiency, it operates at lower voltages, contributing to reduced power usage in portable devices.
6. Data Transfer Rates: It supports fast data transfer rates, enhancing overall system performance.
7. Applications: Commonly used in consumer electronics, automotive systems, and industrial applications due to its robustness and efficiency.
These attributes make the TC58NYG0S3EBAI4 a versatile choice for various storage needs.

Package

The TC58NYG0S3EBAI4 is a NAND flash memory chip packaged in a BGA (Ball Grid Array) type. This configuration allows for efficient thermal management and compact design, suitable for various applications in consumer electronics and embedded systems.

Pinout

The TC58NYG0S3EBAI4 is a NAND flash memory device from Toshiba, specifically a 3D NAND flash memory chip. It typically features a pin count of 48 pins in a BGA (Ball Grid Array) package.
The primary functions of this device include:
1. Data Storage: It serves as non-volatile storage for various applications, such as smartphones, tablets, and solid-state drives (SSDs).
2. Read/Write Operations: The device can perform read and write operations with high speed and efficiency, crucial for modern data-intensive applications.
3. Erase Functionality: It supports block erase commands, allowing users to erase data in specific blocks instead of the whole chip.
4. Interface Support: It often interfaces with common protocols, such as ONFI (Open NAND Flash Interface), to enhance compatibility with different controllers and systems.
These features make the TC58NYG0S3EBAI4 suitable for a wide range of consumer electronics and embedded systems.

Manufacturer

The TC58NYG0S3EBAI4 is manufactured by Toshiba, specifically by Toshiba Memory Corporation, which is now known as Kioxia. Kioxia is a leading company in the flash memory and storage solutions industry. They specialize in NAND flash memory products and solid-state drives (SSDs) for various applications, including consumer electronics, enterprise solutions, and industrial uses. Kioxia focuses on innovative memory and storage technologies, contributing significantly to advancements in data storage solutions across various sectors.

Application

The TC58NYG0S3EBAI4 is a NAND flash memory chip, primarily used in applications such as smartphones, tablets, solid-state drives (SSDs), and other consumer electronics. It provides high-density storage solutions, enabling fast data access and efficient power usage. Its applications extend to automotive systems, industrial equipment, and IoT devices, where reliable and high-performance storage is essential.

Equivalent

The TC58NYG0S3EBAI4 is a NAND flash memory chip. Equivalent products may include other NAND flash chips from manufacturers like Samsung (e.g., K9GAG08U0M), Micron (e.g., MT29Fxxx), and SK Hynix (e.g., H27UCG8T2BTR). Ensure to check specifications like density, interface, and performance for compatibility.