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TH58NYG3S0HBAI4
IC FLASH 8GBIT PARALLEL 63TFBGA
- 제조업체
- Mfr.부분 #TH58NYG3S0HBAI4
- 패키지 TFBGA-63
- 데이터시트
- 재고 있음4581
100% 원래 &새로운
배송 준비 24 시간
365 일 보장
RFQ 및더 많은 할인
사양
| Package | Tray |
| ProductStatus | Active |
| MemoryType | Non-Volatile |
| MemoryFormat | FLASH |
| Technology | FLASH - NAND (SLC) |
| MemorySize | 8Gb (1G x 8) |
| MemoryInterface | Parallel |
| WriteCycleTime-WordPage | 25ns |
| AccessTime | 25 ns |
| Voltage-Supply | 1.7V ~ 1.95V |
| OperatingTemperature | -40°C ~ 85°C (TA) |
| MountingType | Surface Mount |
| Package/Case | 63-VFBGA |
개요
Description
This NAND flash memory is commonly used in applications such as smartphones, tablets, SSDs, and other consumer electronics due to its reliability and speed. The characteristics of this specific model may include its memory architecture, storage capacity, read/write speeds, and endurance levels, which are crucial for ensuring efficient data management in modern technology.
For detailed specifications, including capacity and performance metrics, referring to the product datasheet provided by Toshiba or authorized distributors is recommended.
Features
1. Type: NAND Flash, specifically SLC (Single-Level Cell) or MLC (Multi-Level Cell) variants, depending on the application.
2. Capacity: Typically available in various densities, supporting a range of applications.
3. Interface: Utilizes a parallel or serial interface, facilitating ease of integration into various devices.
4. Endurance: Designed for high cycle endurance, suitable for enterprise and industrial applications.
5. Data Retention: Offers reliable data retention, ensuring data integrity over time.
6. Power Consumption: Optimized for low power consumption, making it suitable for battery-operated devices.
7. Temperature Range: Capable of operating in a wide temperature range, enhancing its usability in harsh environments.
This chip is commonly used in consumer electronics, automotive, and industrial applications due to its reliability and performance characteristics.
Package
Pinout
The primary function of the TH58NYG3S0HBAI4 is to provide non-volatile storage, making it suitable for various applications such as smartphones, tablets, SSDs, and other consumer electronics. It operates using standard NAND Flash memory protocols, allowing for data storage, retrieval, and management. This chip supports features like multiple plane operations and enhanced error correction capabilities, contributing to improved performance and reliability in data storage applications.
Manufacturer
Application
Equivalent
1. Samsung K9F4G08U0A
2. Micron MT29F4G08ABAEAWP
3. SK Hynix H26M21001G2
4. Toshiba TH58NYG3S0HBAA
Verifying compatibility with specific applications is essential before substituting any components.
배송
배송 방법We
DHL, FedEx, TNT, UPS 또는 선택한 다른 운송업체를 통해 글로벌 배송 서비스를 제공합니다.
배송 요금 참조 (DHL/FedEx):
DHL은: 배송 비용은 $25-$45 (0.5kg)에서 2-5 영업일의 추정적 배달 시간이 있습니다.
FedEx는: 배송 비용은 $25-$40 (0.5kg)에서 3-7 영업일의 추정적 배달 시간을 가지고 있습니다.
UPS는: 배송 비용은 $25-$45 (0.5kg)에서 3-7 영업일의 추정적 배달 시간을 가지고 있습니다.
TNT는: 배송 비용은 $25-$65 (0.5kg)에서 3-7 영업일의 추정적 배달 시간을 가지고 있습니다.
EMS는: 배송 비용은 $30-$50 (0.5kg)에서 7-15 영업일의 추정적 배달 시간을 제공합니다.
등록된 항공우편: 배송 비용은 $2-$4 (0.1kg), 예상 배달 시간 5-20 영업일.
지불
Payment Methods
지불 기간은 100% 사전 지불입니다.
현재, 우리는 아래 지불 방법만 받아들입니다.:
1. PayPal
2. 신용/직불 카드
3. 전선 전송
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