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TK39N60W5
Toshiba
- 제조업체
- Mfr.부분 #TK39N60W5
- 패키지
- 데이터시트
- 재고 있음13642
100% 원래 &새로운
배송 준비 24 시간
365 일 보장
RFQ 및더 많은 할인
사양
개요
Description
The TK39N60W5 is a specific model of N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) produced by Toshiba. It is designed for high-voltage applications, handling up to 600 volts and a continuous drain current of 39 amps. This MOSFET features a low on-resistance (R_DS(on)), which minimizes power loss and increases efficiency in power conversion applications.
The device is commonly used in switch-mode power supplies, motor drives, and other high-frequency switching circuits. Its fast switching capabilities make it suitable for applications requiring rapid transitions. The TK39N60W5 is housed in a TO-220 package, allowing for effective heat dissipation and easy mounting.
Key specifications include a maximum gate-source voltage of ±20V and avalanche rating, ensuring robust performance in various conditions. Overall, this MOSFET is valued for its reliability and efficiency in power management solutions.
The device is commonly used in switch-mode power supplies, motor drives, and other high-frequency switching circuits. Its fast switching capabilities make it suitable for applications requiring rapid transitions. The TK39N60W5 is housed in a TO-220 package, allowing for effective heat dissipation and easy mounting.
Key specifications include a maximum gate-source voltage of ±20V and avalanche rating, ensuring robust performance in various conditions. Overall, this MOSFET is valued for its reliability and efficiency in power management solutions.
Features
The TK39N60W5 is a high-voltage N-channel MOSFET designed for various power applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 600V, making it suitable for high-voltage applications.
2. Continuous Drain Current: The device can handle a continuous drain current (I_D) of up to 39A, allowing it to support substantial load requirements.
3. Low On-Resistance: With a low R_DS(on) of approximately 0.39Ω, it ensures efficient operation by minimizing power losses during conduction.
4. Fast Switching Speeds: The MOSFET offers fast switching capabilities, beneficial for applications in switching power supplies and motor drivers.
5. Thermal Performance: It has a maximum junction temperature (T_j) of 150°C, allowing for reliable performance under thermal stress.
6. Package Type: Typically available in TO-220 or similar packages, facilitating easy mounting and heat dissipation.
These features make the TK39N60W5 suitable for applications such as inverters, converters, and other high-efficiency power management systems.
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 600V, making it suitable for high-voltage applications.
2. Continuous Drain Current: The device can handle a continuous drain current (I_D) of up to 39A, allowing it to support substantial load requirements.
3. Low On-Resistance: With a low R_DS(on) of approximately 0.39Ω, it ensures efficient operation by minimizing power losses during conduction.
4. Fast Switching Speeds: The MOSFET offers fast switching capabilities, beneficial for applications in switching power supplies and motor drivers.
5. Thermal Performance: It has a maximum junction temperature (T_j) of 150°C, allowing for reliable performance under thermal stress.
6. Package Type: Typically available in TO-220 or similar packages, facilitating easy mounting and heat dissipation.
These features make the TK39N60W5 suitable for applications such as inverters, converters, and other high-efficiency power management systems.
Package
The TK39N60W5 is typically packaged in a TO-247 format. This package type is designed for high-power applications and provides good thermal performance, making it suitable for use in power electronics and switching applications.
Pinout
The TK39N60W5 is a high-voltage N-channel MOSFET with a pin count of 3. The pin configuration is as follows:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied here turns the device on or off.
2. Drain (D): This is where the load is connected. The current flows from the drain to the source when the MOSFET is on.
3. Source (S): This pin is connected to the ground or negative side of the circuit, completing the circuit when the MOSFET is on.
The device is designed for high-voltage applications, with a maximum drain-source voltage of 600V and a continuous drain current of up to 39A. Its features make it suitable for power management in various applications, including switch-mode power supplies and motor drivers.
1. Gate (G): This pin is used to control the MOSFET. A voltage applied here turns the device on or off.
2. Drain (D): This is where the load is connected. The current flows from the drain to the source when the MOSFET is on.
3. Source (S): This pin is connected to the ground or negative side of the circuit, completing the circuit when the MOSFET is on.
The device is designed for high-voltage applications, with a maximum drain-source voltage of 600V and a continuous drain current of up to 39A. Its features make it suitable for power management in various applications, including switch-mode power supplies and motor drivers.
Manufacturer
The TK39N60W5 is manufactured by Toshiba Electronic Devices & Storage Corporation. Toshiba is a multinational conglomerate based in Japan, known for its wide range of electronic and electrical products. The company operates in various sectors, including digital solutions, infrastructure systems, storage devices, and semiconductor products. The specific device, TK39N60W5, is a power MOSFET, which is part of Toshiba's semiconductor portfolio used in various applications such as power management and conversion systems. Toshiba has a long history in the electronics industry, contributing significantly to technological advancements and innovations.
Application
The TK39N60W5 is a high-voltage N-channel MOSFET primarily used in power electronics applications. Its key application areas include switch-mode power supplies (SMPS), motor drives, LED lighting, and industrial power management systems. It is suitable for high-frequency and high-efficiency switching applications, making it ideal for renewable energy systems, electric vehicles, and HVAC systems.
Equivalent
The TK39N60W5 is a 600V N-channel MOSFET. Equivalent products include the STP39NM60, IRFBC30, and FQPF39N60. Always verify specifications such as voltage, current, R_DS(on), and package type to ensure compatibility in your specific application.
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