UCC27211DR

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UCC27211DR

IC GATE DRVR HALF-BRIDGE 8SOIC

  • 제조업체
  • Mfr.부분 #UCC27211DR
  • 패키지 SOIC (D)-8
  • 데이터시트
  • 재고 있음6175

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사양

Package Tape & Reel (TR),Cut Tape (CT),Bulk
ProductStatus Active
DrivenConfiguration Half-Bridge
ChannelType Independent
NumberofDrivers 2
GateType N-Channel MOSFET
Voltage-Supply 8V ~ 17V
LogicVoltage-VILVIH 1.3V, 2.7V
Current-PeakOutput(SourceSink) 4A, 4A
InputType Non-Inverting
HighSideVoltage-Max(Bootstrap) 120 V
Rise/FallTime(Typ) 7.2ns, 5.5ns
OperatingTemperature -40°C ~ 140°C (TJ)
MountingType Surface Mount
Package/Case 8-SOIC (0.154, 3.90mm Width)

개요

Description

The UCC27211DR is a high-frequency, high-side and low-side driver IC manufactured by Texas Instruments. It is designed to work with N-channel MOSFETs in a variety of power supply, motor drive, and other switching applications. The device operates with a bootstrapped supply voltage up to 120 V and provides a maximum drive current of 4 A (source) and 4 A (sink), making it suitable for high-power applications.
The UCC27211DR features a fast switching time with a maximum propagation delay of 20 ns, enhancing the efficiency of power conversion systems. Its input threshold is compatible with standard TTL and CMOS levels, ensuring easy interfacing with control logic circuits. It also includes an under-voltage lockout (UVLO) function for both high-side and low-side drivers to protect the system during startup and shutdown conditions.
Packaged in an 8-pin SOIC (Small Outline Integrated Circuit) form, the UCC27211DR is well-suited for compact and space-constrained designs. Its robust design and high performance make it a popular choice for designers developing efficient and reliable power management solutions.

Features

The UCC27211DR is a high-frequency, high-side and low-side driver for N-channel MOSFETs. Key features include:
1. Supply Voltage Range: It operates within a wide VDD range from 8 V to 17 V, making it versatile for various applications.
2. High-Peak Current Capability: Provides 4 A source and 4 A sink capability, which ensures rapid switching of the MOSFETs.
3. High-Speed Operation: It supports fast switching speeds, with propagation delays typically around 20 ns, which is ideal for high-frequency applications.
4. Bootstrap Diode: An integrated bootstrap diode simplifies the design by providing a convenient way to generate the gate drive voltage for high-side MOSFETs.
5. Undervoltage Lockout (UVLO): Includes UVLO protection on both high-side and low-side drivers to prevent erratic operation when supply voltages are too low.
6. TTL-Compatible Inputs: Allows easy interfacing with standard digital logic levels.
7. Wide Temperature Range: Designed to operate within a temperature range of -40°C to 140°C, suitable for harsh environments.
8. Package Options: Available in an 8-pin SOIC package for compact and reliable designs.
These features make the UCC27211DR well-suited for applications including motor drives, power supplies, and DC-DC converters.

Package

The UCC27211DR is a high-frequency N-channel MOSFET driver. It comes in an 8-pin SOIC (Small Outline Integrated Circuit) package, designated by the "DR" suffix. This package type is commonly used for surface-mount applications, providing a compact footprint suitable for various electronic circuit designs.

Pinout

The UCC27211DR is a high-frequency N-channel MOSFET driver designed to drive both the high-side and low-side of half-bridge circuits. It is typically used in power supply applications. The device is housed in an 8-pin SOIC package. Here's a concise overview of its pin count and functions:
1. VDD (Pin 1): Provides the supply voltage for the driver circuit.
2. HB (Pin 2): The high-side bootstrap supply pin.
3. HO (Pin 3): High-side gate drive output.
4. HS (Pin 4): High-side source connection, typically connected to the source of the high-side MOSFET.
5. HI (Pin 5): High-side input signal.
6. LI (Pin 6): Low-side input signal.
7. VSS (Pin 7): Ground reference for the driver circuit.
8. LO (Pin 8): Low-side gate drive output.
These pins enable the UCC27211DR to effectively drive high- and low-side MOSFETs in a synchronous buck or half-bridge topology, providing fast switching and improved efficiency in power conversion applications.

Manufacturer

The UCC27211DR is manufactured by Texas Instruments. Texas Instruments (TI) is an American technology company that designs and manufactures semiconductors and various integrated circuits, which it sells to electronics designers and manufacturers globally. The company is widely recognized for its innovation in the semiconductor industry and produces a broad range of products including analog electronics, digital signal processors, and microcontrollers. TI is known for its contributions to the development of chips used in a vast array of electronic devices across different industries such as automotive, industrial, personal electronics, and communications.

Application

The UCC27211DR is a high-frequency N-channel MOSFET driver designed for use in various applications requiring high-speed switching. Key application areas include synchronous buck or boost converters, half-bridge and full-bridge converters, motor drive systems, and other power supply topologies. It is particularly beneficial in systems that require high efficiency and fast switching times, such as in telecommunications, data centers, and industrial systems. Its capability to handle high voltages and provide high current drive makes it suitable for demanding power management applications.

Equivalent

The UCC27211DR is a high-frequency, high-side and low-side gate driver from Texas Instruments. Equivalent products include:
1. FAN7392 from ON Semiconductor
2. IRS2003 from Infineon Technologies
3. MCP14E6 from Microchip Technology
These alternatives offer similar functionalities, such as high-speed switching and low propagation delay, but check specific specs to ensure compatibility with your application.

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