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VNN1NV04PTR-E
IC PWR DRIVER N-CHAN 1:1 SOT223
- 제조업체
- Mfr.부분 #VNN1NV04PTR-E
- 패키지 SOT-223
- 데이터시트 VNN1NV04PTR-E DataSheet
- 재고 있음7590
100% 원래 &새로운
배송 준비 24 시간
365 일 보장
RFQ 및더 많은 할인
사양
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | OMNIFET II™, VIPower™ |
| ProductStatus | Active |
| SwitchType | General Purpose |
| NumberofOutputs | 1 |
| Ratio-Input:Output | 1:1 |
| OutputConfiguration | Low Side |
| OutputType | N-Channel |
| Interface | On/Off |
| Voltage-Load | 36V (Max) |
| Voltage-Supply(Vcc/Vdd) | Not Required |
| Current-Output(Max) | 1.7A |
| RdsOn(Typ) | 250mOhm (Max) |
| InputType | Non-Inverting |
| FaultProtection | Current Limiting (Fixed), Over Temperature, Over Voltage |
| OperatingTemperature | -40°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | SOT-223 |
개요
Description
Key features of the VNN1NV04PTR-E include a low on-resistance, which ensures minimal power loss and optimal efficiency, and a high-speed switching capability, which is crucial for high-frequency applications. The MOSFET typically operates at a voltage rating of around 40V and can handle significant current levels, making it suitable for medium to high power applications.
Additionally, the VNN1NV04PTR-E is housed in a compact package, allowing for efficient use of space in circuit designs. Its robust construction ensures reliability and longevity even in demanding environments. Overall, this MOSFET is a versatile component for engineers seeking to optimize the performance and efficiency of power electronic systems.
Features
1. Voltage and Current Ratings: It typically handles a drain-source voltage (V_DS) of up to 40V and supports a continuous drain current (I_D) of around 200mA.
2. Package: Available in a compact SOT-23 package, which is suitable for space-constrained designs.
3. Low On-Resistance: The MOSFET features low on-state resistance (R_DS(on)), enhancing efficiency by reducing power loss.
4. Fast Switching: It supports rapid switching speeds, making it suitable for high-frequency applications.
5. Logic Level Gate Drive: The transistor can be driven by standard low voltage logic levels, which simplifies interfacing with microcontrollers and other digital circuits.
6. Thermal Performance: Designed for efficient heat dissipation, allowing reliable operation under varying thermal conditions.
These features make the VNN1NV04PTR-E ideal for use in power management, load switching, and signal amplification applications.
Please consult the datasheet or product documentation for specific and up-to-date technical details.
Package
Pinout
The primary function of the VNN1NV04PTR-E is to act as a switch or amplifier in various electronics applications. As an N-channel MOSFET, it allows current to flow from the drain to the source when a positive voltage is applied to the gate relative to the source. This device is often used in power management applications, load switching, and motor drives, thanks to its low on-state resistance and enhanced switching performance.
For specific applications and characteristics, including maximum ratings and electrical specifications, it is always a good idea to refer to the datasheet provided by the manufacturer.
Manufacturer
Application
Equivalent
1. IRLZ44N by Infineon (International Rectifier)
2. NTD2955 by ON Semiconductor
3. FQP30N06L by Fairchild Semiconductor
Verify specific electrical characteristics and package compatibility to ensure suitability. Always check the manufacturer's datasheet for exact specifications and comparisons.
배송
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배송 요금 참조 (DHL/FedEx):
DHL은: 배송 비용은 $25-$45 (0.5kg)에서 2-5 영업일의 추정적 배달 시간이 있습니다.
FedEx는: 배송 비용은 $25-$40 (0.5kg)에서 3-7 영업일의 추정적 배달 시간을 가지고 있습니다.
UPS는: 배송 비용은 $25-$45 (0.5kg)에서 3-7 영업일의 추정적 배달 시간을 가지고 있습니다.
TNT는: 배송 비용은 $25-$65 (0.5kg)에서 3-7 영업일의 추정적 배달 시간을 가지고 있습니다.
EMS는: 배송 비용은 $30-$50 (0.5kg)에서 7-15 영업일의 추정적 배달 시간을 제공합니다.
등록된 항공우편: 배송 비용은 $2-$4 (0.1kg), 예상 배달 시간 5-20 영업일.
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