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ZXTN2011ZTA

Name: ZXTN2011ZTA
Rating: 4.7 (12 reviews)

TRANS NPN 100V 4.5A SOT-89-3

제조업체
Mfr.부분 #ZXTN2011ZTA
패키지
데이터시트 ZXTN2011ZTA DataSheet
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사양

Part Status	Active
Transistor Type	NPN
Current - Collector (Ic) (Max)	4.5 A
Voltage - Collector Emitter Breakdown (Max)	100 V
Vce Saturation (Max) @ Ib, Ic	195mV @ 500mA, 5A
Current - Collector Cutoff (Max)	50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 2A, 2V
Power - Max	2.1 W
Frequency - Transition	130MHz
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-243AA
Supplier Device Package	SOT-89-3
Base Product Number	ZXTN2011

개요

Description

ZXTN2011ZTA is a type of electronic component, commonly categorized as an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor). It is designed for applications requiring efficient switching and amplification. The device typically features a low on-resistance, making it suitable for power management in various electronic devices, including DC-DC converters and motor drivers.
Key specifications often include maximum voltage ratings, current handling capabilities, and thermal performance characteristics. Its compact size and efficiency enable it to be utilized in consumer electronics, automotive applications, and industrial equipment.
When working with ZXTN2011ZTA, engineers must consider thermal management and appropriate gate drive voltage levels to ensure optimal performance. Overall, this component is valued for its reliability and efficiency in modern electronic designs.

Features

The ZXTN2011ZTA is a versatile N-channel MOSFET known for its high efficiency and performance in power applications. Key features include:
1. Voltage Rating: Supports a maximum drain-source voltage (V_DS) of 30V, making it suitable for low-voltage applications.
2. Current Handling: Capable of handling continuous drain current (I_D) up to 20A, ideal for power management and switching.
3. R_DS(on): Low on-resistance of approximately 0.025 ohms at V_GS = 10V, which minimizes power loss during operation.
4. Gate Threshold Voltage: Gate-source threshold voltage (V_GS(th)) is typically between 1V and 2V, enabling efficient switching at lower voltages.
5. Package Type: Available in a TO-220 package, facilitating heat dissipation and robust mounting.
6. Applications: Commonly used in power supplies, motor drivers, and DC-DC converters due to its fast switching capabilities and thermal performance.
Overall, the ZXTN2011ZTA is a reliable choice for various electronic and power management applications.

Package

The ZXTN2011ZTA is typically packaged in a TO-220 format, which is a type of metal can package that provides efficient heat dissipation and is suitable for power applications.

Pinout

The ZXTN2011ZTA is a N-channel MOSFET transistor with a total of 3 pins. The pin configuration and their functions are as follows:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate allows current to flow between the drain and source.

2. Drain (D): This is the pin where the current enters the MOSFET when it is in the 'on' state. It connects to the load.
3. Source (S): This pin is where the current exits the MOSFET. It is typically connected to ground or the negative side of the power supply in many applications.
The ZXTN2011ZTA is commonly used for switching applications in power management for its low on-resistance and fast switching capabilities.

Manufacturer

The ZXTN2011ZTA is manufactured by ON Semiconductor, a global supplier of semiconductor components. ON Semiconductor specializes in a wide range of products, including power management solutions, analog devices, and sensors, serving various industries such as automotive, industrial, and consumer electronics. The company focuses on energy-efficient technologies and innovations, making it a key player in the semiconductor market.

Application

The ZXTN2011ZTA is a N-channel MOSFET primarily used in power management applications. Its application areas include power supply circuits, DC-DC converters, motor drivers, and switching regulators. It is suited for high-speed and high-efficiency switching in consumer electronics, telecommunications, and industrial equipment. Additionally, it can be used in battery-powered devices due to its low on-resistance and efficient thermal performance.

Equivalent

The ZXTN2011ZTA is a N-channel MOSFET. Equivalent products include the IRF520, BS170, and 2N7000, depending on the specific application requirements such as voltage rating and current capacity. Always verify specifications such as threshold voltage and on-resistance to ensure compatibility with your circuit.